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Q97111419 PDF预览

Q97111419

更新时间: 2024-01-27 21:44:13
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器晶体管
页数 文件大小 规格书
5页 121K
描述
RF Small Signal Bipolar Transistor, 0.004A I(C), 1-Element, L Band, Silicon, NPN

Q97111419 技术参数

生命周期:Transferred包装说明:DISK BUTTON, O-CRDB-F4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.4外壳连接:EMITTER
最大集电极电流 (IC):0.004 A基于收集器的最大容量:0.24 pF
集电极-发射极最大电压:8 V配置:SINGLE
最高频带:L BANDJESD-30 代码:O-CRDB-F4
元件数量:1端子数量:4
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON极性/信道类型:NPN
认证状态:Not Qualified参考标准:ESA-SCC-5611/006
表面贴装:YES端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):6500 MHz
Base Number Matches:1

Q97111419 数据手册

 浏览型号Q97111419的Datasheet PDF文件第2页浏览型号Q97111419的Datasheet PDF文件第3页浏览型号Q97111419的Datasheet PDF文件第4页浏览型号Q97111419的Datasheet PDF文件第5页 
HiRel NPN Silicon RF Transistor  
BFY 180  
Features  
¥ HiRel Discrete and Microwave Semiconductor  
¥ For low power amplifiers at collector currents from  
0.2 to 2.5 mA  
¥ Hermetically sealed microwave package  
¥ fT = 6.5 GHz, F = 2.6 dB at 2 GHz  
¥
qualified  
¥ ESA/SCC Detail Spec. No.: 5611/006  
Micro-X1  
ESD: Electrostatic discharge sensitive device, observe handling precautions!  
Type  
Marking  
Ordering Code  
Pin Configuration  
Package  
BFY 180 (ql)  
-
see below  
C
E
B
E
Micro-X1  
(ql) Quality Level: P: Professional Quality, Ordering Code: Q97301013  
H: High Rel Quality,  
S: Space Quality,  
Ordering Code: on request  
Ordering Code: on request  
ES: ESA Space Quality, Ordering Code: Q97111419  
(see Chapter Order Instructions for ordering example)  
Table 1  
Maximum Ratings  
Parameter  
Symbol  
VCEO  
VCES  
VCBO  
VEBO  
IC  
Limit Values  
Unit  
V
Collector-emitter voltage  
Collector-emitter voltage, VBE = 0  
Collector-base voltage  
Emitter-base voltage  
Collector current  
8
15  
V
15  
V
2
V
4
mA  
mA  
mW  
°C  
°C  
°C  
Base current  
IB  
0.5 1)  
Total power dissipation, TS £ 176 °C 2)  
Junction temperature  
Operating temperature range  
Storage temperature range  
Thermal Resistance  
Junction soldering point 2)  
1)  
Ptot  
30  
Tj  
200  
Top  
- 65 É + 200  
- 65 É + 200  
Tstg  
Rth JS  
< 805  
K/W  
The maximum permissible base current for VFBE measurements is 3 mA (spot-measurement duration < 1 s).  
TS is measured on the collector lead at the soldering point to the pcb.  
2)  
Semiconductor Group  
1
Draft A04 1998-04-01  

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