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Q67100-Q530 PDF预览

Q67100-Q530

更新时间: 2024-01-04 09:26:57
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
22页 217K
描述
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM

Q67100-Q530 数据手册

 浏览型号Q67100-Q530的Datasheet PDF文件第2页浏览型号Q67100-Q530的Datasheet PDF文件第3页浏览型号Q67100-Q530的Datasheet PDF文件第4页浏览型号Q67100-Q530的Datasheet PDF文件第5页浏览型号Q67100-Q530的Datasheet PDF文件第6页浏览型号Q67100-Q530的Datasheet PDF文件第7页 
256 K × 4-Bit Dynamic RAM  
Low Power 256 K × 4-Bit Dynamic RAM  
HYB 514256B/BJ-50/-60/-70  
HYB 514256BL/BJL-50/-60/-70  
Advanced Information  
262 144 words by 4-bit organization  
Single + 5 V (± 10 %) supply with a built-in VBB  
generator  
Output unlatched at cycle end allows two-  
dimensional chip selection  
Read-modify-write, CAS-before-RAS  
refresh, RAS-only refresh, hidden-refresh  
and fast page mode capability  
All inputs, outputs and clocks  
TTL-compatible  
Fast access and cycle time  
50 ns access time  
95 ns cycle time (-50 version)  
60 ns access time  
110 ns cycle time (-60 version)  
70 ns access time  
130 ns cycle time (-70 version)  
Fast page mode cycle time  
35 ns (-50 version)  
512 refresh cycles/8 ms  
512 refresh cycles/64 ms  
40 ns (-60 version)  
for L-version only  
45 ns (-70 version)  
Plastic Packages:  
P-DIP-20-2,  
P-SOJ-26/20-1  
Low power dissipation  
max. 495 mW active (-50 version)  
max. 440 mW active (-60 version)  
max. 385 mW active (-70 version)  
max. 5.5 mW standby  
max. 1.1 mW standby for L-version  
Ordering Information  
Type  
Ordering Code  
Q67100-Q1044  
Q67100-Q530  
Q67100-Q433  
Q67100-Q1054  
Q67100-Q536  
Q67100-Q537  
on request  
Package  
Description  
HYB 514256B-50  
HYB 514256B-60  
HYB 514256B-70  
HYB 514256BJ-50  
HYB 514256BJ-60  
HYB 514256BJ-70  
HYB 514256BL-50  
HYB 514256BL-60  
HYB 514256BL-70  
HYB 514256BJL-50  
HYB 514256BJL-60  
HYB 514256BJL-70  
P-DIP-20-2  
DRAM (access time 50ns)  
DRAM (access time 60 ns)  
DRAM (access time 70 ns)  
DRAM (access time 50 ns)  
DRAM (access time 60 ns)  
DRAM (access time 70 ns)  
DRAM (access time 50 ns)  
DRAM (access time 60 ns)  
DRAM (access time 70 ns)  
DRAM (access time 50 ns)  
DRAM (access time 60 ns)  
DRAM (access time 70 ns)  
P-DIP-20-2  
P-DIP-20-2  
P-SOJ-26/20-1  
P-SOJ-26/20-1  
P-SOJ-26/20-1  
P-DIP-20-2  
Q67100-Q542  
Q67100-Q543  
on request  
P-DIP-20-2  
P-DIP-20-2  
P-SOJ-26/20-1  
P-SOJ-26/20-1  
P-SOJ-26/20-1  
Q67100-Q608  
Q67100-Q607  
Semiconductor Group  
55  
01.95  

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