Datasheet > Q67100-3033

Q67100-3033

更新时间： 2024-02-20 23:11:28

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
28页	1325K
描述
256K x 16-Bit EDO-Dynamic RAM

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中文翻译

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数据手册

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Q67100-3033 数据手册

256K x 16-Bit EDO-Dynamic RAM

HYB 514265BJ-400/40/-45/-50

HYB 314265BJ(L)-45/-50

Preliminary Information

• 262 144 words by 16-bit organization

• 0 to 70 °C operating temperature

• EDO - Hyper Page Mode

• Performance:

• Power Supply:

HYB 514265BJ-400

HYB 514265BJ-40

HYB 514265BJ-45

HYB 514265BJ-50

+5 V

±5%

+5 V ±10%

+5 V

±10%

HYB 314265BJ(L)-45 +3.3 V ±0.3 V

HYB 314265BJ(L)-50 +3.3 V ±0.3 V

-400

-40

-45

-50

t_rc

t_rac

t_cac

t_aa

• Read, write, read-modify-write, CAS -before

RAS refresh, RAS only refresh, hidden refresh

mode

• Low Power Version (L) with Self Refresh

and 250 µA self refresh current

t_hpc

12,5

MHz

• 2 CAS / 1 WE control

• Low Power dissipation

• All inputs and outputs TTL-compatible

- Active(max.):

120mA / 120mA / 105mA / 95 mA

• 512 refresh cycles / 16 ms

- Standby : TTL Inputs (max.)

2.0 mA

512 refresh cycles / 128 ms (L-version)

- Standby: CMOS Inputs (max.) 1.0 mA

- Standby (L-version)

200 µA

• Plastic Packages: P-SOJ-40-3 400 mil width

The HYB 5(3)14265BJ(L) is the new generation dynamic RAM organized as 262 144 words by

16-bit. The HYB 5(3)14265BJ(L) utilizes the SIEMENS 16M-CMOS submicron silicon gate process

as well as advanced circuit techniques to provide wide operation margins, both internally and for the

system user. Multiplexed address inputs permit the HYB 5(3)14265BJ(L) to be packed in a

standard plastic 400mil wide P-SOJ-40-3 package. This package size provides high system bit

densities and is compatible with commonly used automatic testing and insertion equipment.

The HYB314265BJL parts have a very low power “sleep mode“ supported by Self Refresh.

Semiconductor Group

6.96

12 3 4 5 6 7...28

中文翻译

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