生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | compliant | 风险等级: | 5.64 |
最大集电极电流 (IC): | 0.6 A | 集电极-发射极最大电压: | 150 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 200 |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 100 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PZT5401L-X-AA3-R | UTC |
获取价格 |
HIGH VOLTAGE SWITCHING TRANSISTOR |
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PZT5401-TP | MCC |
获取价格 |
Small Signal Bipolar Transistor, |
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PZT5401-TP-HF | MCC |
获取价格 |
Small Signal Bipolar Transistor, |
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PZT5551 | WEITRON |
获取价格 |
NPN Silicon Planar Epitaxial Transistor |
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PZT5551 | UTC |
获取价格 |
HIGH VOLTAGE SWITCHING TRANSISTOR |
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PZT5551 | NXP |
获取价格 |
TRANSISTOR 60 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SOT-223, 4 PIN, BIP General Pur |
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PZT5551 | MCC |
获取价格 |
Tape&Reel:2.5Kpcs/Reel; |
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PZT5551 | YANGJIE |
获取价格 |
SOT-223 |
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PZT5551 | BL Galaxy Electrical |
获取价格 |
160V,0.6A,General Purpose NPN Bipolar Transistor |
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PZT5551_12 | UTC |
获取价格 |
HIGH VOLTAGE SWITCHING TRANSISTOR |
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