5秒后页面跳转
PY26325PMB PDF预览

PY26325PMB

更新时间: 2024-09-21 21:01:23
品牌 Logo 应用领域
PYRAMID 可编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 552K
描述
UVPROM, 8KX8, CMOS, PDIP24, 0.300 INCH, PLASTIC, DIP-24

PY26325PMB 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DIP
包装说明:0.300 INCH, PLASTIC, DIP-24针数:24
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.61风险等级:5.82
JESD-30 代码:R-PDIP-T24JESD-609代码:e0
长度:31.877 mm内存密度:65536 bit
内存集成电路类型:UVPROM内存宽度:8
功能数量:1端子数量:24
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:8KX8
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified筛选级别:MIL-STD-883
座面最大高度:5.334 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mmBase Number Matches:1

PY26325PMB 数据手册

 浏览型号PY26325PMB的Datasheet PDF文件第2页浏览型号PY26325PMB的Datasheet PDF文件第3页浏览型号PY26325PMB的Datasheet PDF文件第4页浏览型号PY26325PMB的Datasheet PDF文件第5页浏览型号PY26325PMB的Datasheet PDF文件第6页浏览型号PY26325PMB的Datasheet PDF文件第7页 
PY263/PY264  
8K x 8 REPROGRAMMABLE PROM  
FEATURES  
EPROM Technology for reprogramming  
High Speed  
Windowed devices for reprogramming  
Fully TTL Compatible Inputs and Outputs  
– 25/35/45/55 ns (Commercial)  
– 25/35/45/55 ns (Military)  
Standard Pinout (JEDEC Approved)  
– 24-Pin 300 mil Windowed CERDIP (PY263)  
– 24-Pin 300 mil Non-Windowed Plastic DIP  
(PY263)  
Low Power Operation:  
– 24-Pin 600 mil Windowed CERDIP (PY264)  
– 24-Pin 600 mil Non-Windowed Plastic DIP  
(PY264)  
– 660 mW Commercial  
– 770 mW Military  
Single 5V±10% Power Supply  
DESCRIPTION  
The PY263 and PY264 are 8Kx8 CMOS PROMs. The  
devices are available in windowed packages which when  
exposed to UV light, the memory content in the PROM is  
erased and can be reprogrammed. EPROM technology is  
used in the memory cells for programming. The EPROM  
requires a 12.5V for programming. Devices are tested to  
insure that performance of the device meets the DC and  
AC specification limits after customer programming.  
To perform a read operation from the device, CS is LOW.  
The memory contents in the address established by the  
Address pins (A0 to A12) will become available on the out-  
puts (O0 to O7).  
The PY263 is available in 24-pin 300 mil Ceramic DIPs  
(Windowed) and Plastic DIPs (Non-Windowed).  
The PY264 is available in 24-pin 600 mil Ceramic DIPs  
(Windowed) and Plastic DIPs (Non-Windowed).  
FUNCTIONAL BLOCk DIAꢀRAM  
PIN CONFIꢀURATION  
DIP (P8, WD2)  
Note: Window on  
WD2 pacꢁage only  
Document # EPROM102 REV A  
Revised March 2009  

与PY26325PMB相关器件

型号 品牌 获取价格 描述 数据表
PY26325WC PYRAMID

获取价格

UVPROM, 8KX8, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24
PY26325WM PYRAMID

获取价格

UVPROM, 8KX8, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24
PY26325WMB PYRAMID

获取价格

UVPROM, 8KX8, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24
PY26335PC PYRAMID

获取价格

UVPROM, 8KX8, CMOS, PDIP24, 0.300 INCH, PLASTIC, DIP-24
PY26335PM PYRAMID

获取价格

UVPROM, 8KX8, CMOS, PDIP24, 0.300 INCH, PLASTIC, DIP-24
PY26335PMB PYRAMID

获取价格

UVPROM, 8KX8, CMOS, PDIP24, 0.300 INCH, PLASTIC, DIP-24
PY26335WC PYRAMID

获取价格

暂无描述
PY26335WM PYRAMID

获取价格

UVPROM, 8KX8, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24
PY26335WMB PYRAMID

获取价格

UVPROM, 8KX8, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24
PY26345PC PYRAMID

获取价格

UVPROM, 8KX8, CMOS, PDIP24, 0.300 INCH, PLASTIC, DIP-24