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PTF181301A

更新时间： 2024-02-03 07:22:13
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体射频场效应晶体管功率场效应晶体管局域网
页数 文件大小 规格书
4页 66K
描述
LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz

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中文翻译

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PTF181301A 技术参数

生命周期：Obsolete包装说明：FLATPACK, R-CDFP-F2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.84
其他特性：HIGH RELIABILITY外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：65 V
FET 技术：METAL-OXIDE SEMICONDUCTOR最高频带：L BAND
JESD-30 代码：R-CDFP-F2JESD-609代码：e3
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：200 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLATPACK极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：448 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：MATTE TIN端子形式：FLAT
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

PTF181301A 数据手册

 浏览型号PTF181301A的Datasheet PDF文件第2页浏览型号PTF181301A的Datasheet PDF文件第3页浏览型号PTF181301A的Datasheet PDF文件第4页 
Developmental PTF181301  
LDMOS RF Power Field Effect Transistor  
130 W, 1805–1880 MHz  
Description  
Features  
The PTF181301 is a 130 W, internally matched GOLDMOS FET intended  
for GSM and EDGE applications in the 1805 to 1880 MHz band. Full gold  
metallization ensures excellent device lifetime and reliability.  
•
•
Broadband internal matching  
Typical EDGE performance  
- Average output power = 55 W  
- Gain = 15.5 dB  
- Efficiency = 32%  
- EVM = 1.7%  
EDGE EVM Performance  
EVM & Efficiency vs. Output Power  
VDD = 28 V, IDQ = 1.8 A, f = 1879.8 MHz  
•
•
Typical CW performance  
- Output power at P–1dB = 150 W  
- Gain = 14.5 dB  
4
3
2
1
0
40  
30  
20  
10  
0
Efficiency  
- Efficiency = 47%  
Integrated ESD protection: Human Body  
Model, Class 1 (minimum)  
•
•
•
Excellent thermal stability  
Low HCI drift  
Capable of handling 10:1 VSWR @ 28 V,  
130 W (CW) output power  
EVM  
40  
Output Power (dBm)  
35  
38  
43  
45  
48  
50  
PTF181301A  
Package 20260  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
= 25°C unless otherwise indicated  
RF Characteristics at T  
CASE  
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)  
= 28 V, I = 1.8 A, P = 55 W, f = 1879.8 MHz  
V
DD  
DQ  
OUT  
Characteristic  
Error Vector Magnitude  
Symbol  
EVM (RMS)  
ACPR  
Min  
—
Typ  
1.7  
Max  
—
Unit  
%
Modulation Spectrum @ 400 kHz  
Modulation Spectrum @ 600 kHz  
Gain  
—
–60  
–73  
15.5  
32  
—
dBc  
dBc  
dB  
ACPR  
—
—
G
ps  
—
—
Drain Efficiency  
ηD  
—
—
%
Two–Tone Measurements (tested in Infineon test fixture)  
V
DD  
= 28 V, I  
= 1.8 A, P = 130 W PEP, f = 1880 MHz, tone spacing = 1 MHz  
OUT  
DQ  
Characteristic  
Symbol  
Min  
—
Typ  
15.5  
35  
Max  
—
Unit  
dB  
Gain  
G
ps  
Drain Efficiency at –30 dBc IM3  
Intermodulation Distortion  
ηD  
—
—
%
IMD  
—
–30  
—
dBc  
Developmental Data Sheet  
1 of 4  
2004-04-28  
1234

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