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PTF181301F

更新时间： 2024-01-24 20:20:48
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器晶体管
页数 文件大小 规格书
10页 223K
描述
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 31260, 2 PIN

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中文翻译

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PTF181301F 技术参数

生命周期：Obsolete包装说明：FLATPACK, R-CDFP-F2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.84
其他特性：HIGH RELIABILITY外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：65 V
FET 技术：METAL-OXIDE SEMICONDUCTOR最高频带：L BAND
JESD-30 代码：R-CDFP-F2JESD-609代码：e3
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：200 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：FLATPACK极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：448 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：MATTE TIN端子形式：FLAT
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

PTF181301F 数据手册

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PTF181301E  
PTF181301F  
Thermally-Enhanced High Power RF LDMOS FETs  
130 W, 1805 – 1880 MHz, 1930 – 1990 MHz  
Description  
The PTF181301E and PTF181301F are thermally-enhanced, 130-watt,  
PTF181301E  
internally matched GOLDMOS FETs intended for GSM and EDGE appli-  
cations in the DCS/PCS bands. Thermally-enhanced packaging provides  
the coolest operation possible. Full gold metallization ensures excellent  
Package 30260  
device lifetime and reliability.  
PTF181301F*  
Package 31260  
Typical EDGE Performance  
EVM & Efficiency vs. Output Power  
VDD = 28 V, IDQ = 1.5 A, f = 1989.1MHz  
Features  
4
3
2
1
0
40  
30  
20  
10  
0
TCASE = 25°C  
TCASE = 85°C  
•
•
•
Thermally-enhanced packaging  
Broadband internal matching  
Efficiency  
Typical EDGE performance  
- Average output power = 55 W  
- Gain = 15.5 dB  
- Efficiency = 31%  
- EVM = 1.7%  
EVM  
•
•
Typical CW performance  
- Output power at P–1dB = 150 W  
- Gain = 14.5 dB  
- Efficiency = 47%  
35  
40  
45  
50  
Integrated ESD protection: Human Body  
Model, Class 1 (minimum)  
Output Power (dBm)  
•
•
•
Excellent thermal stability  
Low HCI drift  
ESD: Electrostatic discharge sensitive device—observe handling  
precautions!  
Capable of handling 10:1 VSWR @ 28 V,  
130 W (CW) output power  
RF Characteristics at T  
= 25°C unless otherwise indicated  
CASE  
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)  
= 28 V, I = 1.5 A, P = 55 W, f = 1989.1 MHz  
V
DD  
DQ  
OUT  
Characteristic  
Error Vector Magnitude  
Symbol  
EVM (RMS)  
ACPR  
Min  
—
Typ  
1.7  
Max  
—
Unit  
%
Modulation Spectrum @ 400 kHz  
Modulation Spectrum @ 600 kHz  
Gain  
—
–60  
–73  
15.5  
31  
—
dBc  
dBc  
dB  
ACPR  
—
—
G
ps  
—
—
Drain Efficiency  
ηD  
—
—
%
*See Infineon distributor for future availability.  
Data Sheet  
1 of 10  
2004-08-17  
1234567...10

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