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PTF191601 PDF预览

PTF191601

更新时间： 2024-01-18 01:06:33
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管射频
页数 文件大小 规格书
4页 61K
描述
LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz

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中文翻译

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PTF191601 技术参数

生命周期：Obsolete包装说明：FLATPACK, R-CDFP-F2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.84
Is Samacsys：N其他特性：HIGH RELIABILITY
外壳连接：SOURCE配置：SINGLE
最小漏源击穿电压：65 VFET 技术：METAL-OXIDE SEMICONDUCTOR
最高频带：L BANDJESD-30 代码：R-CDFP-F2
JESD-609代码：e3元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：200 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：FLATPACK
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：603 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：MATTE TIN
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

PTF191601 数据手册

 浏览型号PTF191601的Datasheet PDF文件第2页浏览型号PTF191601的Datasheet PDF文件第3页浏览型号PTF191601的Datasheet PDF文件第4页 
Advance Information  
PTF191601  
LDMOS RF Power Field Effect Transistor  
160 W, 1930 – 1990 MHz  
Description  
Features  
The PTF191601 is a 160 W, internally matched GOLDMOS FET intended  
for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold  
metallization ensures excellent device lifetime and reliability.  
•
•
Broadband internal matching  
Typical EDGE performance  
- Average output power = 62 W  
- Gain = 14 dB  
- Efficiency = 32%  
- EVM = 1.7%  
Typical EDGE EVM Performance  
VDD = 28 V, IDQ = 2.2 A, f = 1989.1 MHz  
•
•
Typical CW performance  
- Output power at P–1dB = 180 W  
- Gain = 13 dB  
4
3
2
1
0
40  
35  
30  
25  
20  
15  
10  
5
- Efficiency = 47%  
Integrated ESD protection: Human Body  
Model, Class 1 (minimum)  
•
•
•
Excellent thermal stability  
Low HCI drift  
Efficiency  
EVM  
Capable of handling 10:1 VSWR @ 28 V,  
160 W (CW) output power  
0
30  
35  
40  
45  
50  
55  
PTF191601E  
Package 30260  
Output Power (dBm)  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
= 25°C unless otherwise indicated  
RF Characteristics at T  
CASE  
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)  
= 28 V, I = 2.2 A, P = 62 W, f = 1989.8 MHz  
V
DD  
DQ  
OUT  
Characteristic  
Error Vector Magnitude  
Symbol  
EVM (RMS)  
ACPR  
Min  
—
Typ  
1.7  
–60  
–73  
14  
Max  
—
Units  
%
Modulation Spectrum @ 400 kHz  
Modulation Spectrum @ 600 kHz  
Gain  
—
—
dBc  
dBc  
dB  
ACPR  
—
—
G
ps  
—
—
Drain Efficiency  
ηD  
—
32  
—
%
Two–Tone Measurements (tested in Infineon test fixture)  
V
DD  
= 28 V, I  
= 2.2 A, P = 160 W PEP, f = 1990 MHz, tone spacing = 1 MHz  
OUT  
DQ  
Characteristic  
Gain  
Symbol  
Min  
—
Typ  
14  
Max  
—
Units  
dB  
G
ps  
Drain Efficiency  
ηD  
—
36  
—
%
Intermodulation Distortion  
Developmental Data Sheet  
IMD  
—
–30  
—
dBc  
1 of 4  
2004-03-17  
1234

中文翻译

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