ADVANCED SEMICONDUCTOR 更新时间：2023-10-27 05:19:08
先进半导体股份有限公司（ASI）生产射频功率晶体管和微波二极管。他们是一家注册了ISO9001的公司，专门生产用于更换和新设计的过时且难以找到的组件。他们的射频功率晶体管系列主要取代了摩托罗拉、飞利浦和SGS汤姆森的产品。他们的微波二极管系列主要取代HP、M/A-COM、Alpha和Loral/Frequency源的微波二极管。Advanced Semiconductor对客户服务有着根本的承诺，我们将始终尽最大努力确保您的需求得到满足。
| 型号 | 品牌 | 价格 | 文档 | 应用 | 描述 | |
| 2N2348 | ASI | 获取价格 |  |
栅栅极 | Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 200V V(DRM), 200V V(RRM), 1 Eleme | |
| 2N2323 | ASI | 获取价格 | |
栅栅极 | Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 50V V(DRM), 1 Element, TO-39, TO- | |
| 2N2324 | ASI | 获取价格 | |
栅栅极 | Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 100V V(DRM), 100V V(RRM), 1 Eleme | |
| 2N2326 | ASI | 获取价格 | |
栅栅极 | Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 200V V(DRM), 1 Element, TO-39, TO | |
| 2N2329 | ASI | 获取价格 | |
暂无描述 | ||
| 2N2328 | ASI | 获取价格 | |
栅栅极 | Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 300V V(DRM), 300V V(RRM), 1 Eleme | |
| 2N2322 | ASI | 获取价格 | |
栅栅极 | Silicon Controlled Rectifier, 1600mA I(T), 25V V(DRM) | |
| 2N2030 | ASI | 获取价格 | |
栅栅极 | Silicon Controlled Rectifier, 70000mA I(T), 400V V(DRM) | |
| 2N2027 | ASI | 获取价格 | |
栅栅极 | Silicon Controlled Rectifier, 70000mA I(T), 200V V(DRM) | |
| 2N2025 | ASI | 获取价格 | |
栅栅极 | Silicon Controlled Rectifier, 70000mA I(T), 100V V(DRM) | |
| 2N2024 | ASI | 获取价格 | |
栅栅极 | Silicon Controlled Rectifier, 70000mA I(T), 50V V(DRM) | |
| 2N2023 | ASI | 获取价格 | |
栅栅极 | Silicon Controlled Rectifier, 70000mA I(T), 25V V(DRM) | |
| ASR1002D | ASI | 获取价格 | |
光电二极管 | Step Recovery Diode, Very High Frequency to C Band, 7.5GHz Max, Silicon, SOT-23, 3 PIN | |
| ASR1002C | ASI | 获取价格 | |
光电二极管 | Step Recovery Diode, Very High Frequency to C Band, 7.5GHz Max, Silicon, SOT-23, 3 PIN | |
| ASR1002A | ASI | 获取价格 | |
光电二极管 | Step Recovery Diode, Very High Frequency to C Band, 7.5GHz Max, Silicon, SOT-23, 3 PIN | |
| ASR1001E | ASI | 获取价格 | |
光电二极管 | Step Recovery Diode, Ultra High Frequency to KU Band, 15GHz Max, Silicon, SOT-23, 3 PIN | |
| ASR1001D | ASI | 获取价格 | |
光电二极管 | Step Recovery Diode, Ultra High Frequency to KU Band, 15GHz Max, Silicon, SOT-23, 3 PIN | |
| ASR1001C | ASI | 获取价格 | |
光电二极管 | Step Recovery Diode, Ultra High Frequency to KU Band, 15GHz Max, Silicon, SOT-23, 3 PIN | |
| ASR1001B | ASI | 获取价格 | |
光电二极管 | Step Recovery Diode, Ultra High Frequency to KU Band, 15GHz Max, Silicon, SOT-23, 3 PIN | |
| ASR1001A | ASI | 获取价格 | |
光电二极管 | Step Recovery Diode, Ultra High Frequency to KU Band, 15GHz Max, Silicon, SOT-23, 3 PIN | |
| ASR1000B | ASI | 获取价格 | |
光电二极管 | Step Recovery Diode, Ultra High Frequency to KU Band, 18GHz Max, Silicon, SOT-23, 3 PIN | |
| ASR1000 | ASI | 获取价格 | |
光电二极管 | Step Recovery Diode, Ultra High Frequency to KU Band, 18GHz Max, Silicon, SOT-23, 3 PIN | |
| TVU020A | ASI | 获取价格 | |
局域网晶体管 | RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, FM-4 | |
| ASI10826 | ASI | 获取价格 | |
局域网放大器晶体管 | RF Power Bipolar Transistor, High Frequency Band, Silicon, NPN, FM-4 | |
| P1000-1215 | ASI | 获取价格 | |
高功率电源射频微波 | Narrow Band High Power Amplifier, | |
| ASI10760 | ASI | 获取价格 | |
放大器晶体管 | RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, | |
| ABM9001-867 | ASI | 获取价格 | |
脉冲二极管 | Mixer Diode, Medium Barrier, X Band, 6.5dB Noise Figure, Silicon, | |
| ABM9001-899 | ASI | 获取价格 | |
脉冲二极管 | Mixer Diode, Medium Barrier, X Band, 6.5dB Noise Figure, Silicon, | |
| ABM9001-850 | ASI | 获取价格 | |
脉冲二极管 | Mixer Diode, Medium Barrier, X Band, 6.5dB Noise Figure, Silicon, | |
| ABM9001-711 | ASI | 获取价格 | |
脉冲二极管 | Mixer Diode, Medium Barrier, X Band, 6.5dB Noise Figure, Silicon, | |
ADVANCED SEMICONDUCTOR 经销商与分销商
| 公司名称 | 类型 | 国家 | 官网 | 地址 |
| 得捷电子 | 分销商 | 中国 | https://www.digikey.cn/ | 上海市长宁区长宁路1133号长宁来福士广场T1幢办公楼32层3202、3203、3205、3206单元 |
| 贸泽电子 | 分销商 | 中国 | https://www.mouser.cn/ | 上海市长宁区娄山关路555号长房国际广场办公楼2506-2510室 |
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