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PPXD2010VMM120R PDF预览

PPXD2010VMM120R

更新时间: 2022-02-26 10:40:13
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 微控制器
页数 文件大小 规格书
119页 667K
描述
PXS20 Microcontroller

PPXD2010VMM120R 数据手册

 浏览型号PPXD2010VMM120R的Datasheet PDF文件第6页浏览型号PPXD2010VMM120R的Datasheet PDF文件第7页浏览型号PPXD2010VMM120R的Datasheet PDF文件第8页浏览型号PPXD2010VMM120R的Datasheet PDF文件第10页浏览型号PPXD2010VMM120R的Datasheet PDF文件第11页浏览型号PPXD2010VMM120R的Datasheet PDF文件第12页 
Introduction  
1.5.4  
Enhanced Direct Memory Access (eDMA)  
The enhanced direct memory access (eDMA) controller is a second-generation module capable of performing complex data  
movements via 16 programmable channels, with minimal intervention from the host processor. The hardware microarchitecture  
includes a DMA engine which performs source and destination address calculations, and the actual data movement operations,  
along with an SRAM-based memory containing the transfer control descriptors (TCD) for the channels. This implementation  
is used to minimize the overall block size.  
The eDMA module provides the following features:  
16 channels supporting 8-, 16-, and 32-bit value single or block transfers  
Support variable sized queues and circular buffered queue  
Source and destination address registers independently configured to post-increment or stay constant  
Support major and minor loop offset  
Support minor and major loop done signals  
DMA task initiated either by hardware requestor or by software  
Each DMA task can optionally generate an interrupt at completion and retirement of the task  
Signal to indicate closure of last minor loop  
Transfer control descriptors mapped inside the SRAM  
The eDMA controller is replicated for each processor.  
1.5.5  
On-Chip Flash Memory with ECC  
This device includes programmable, non-volatile flash memory. The non-volatile memory (NVM) can be used for instruction  
storage or data storage, or both. The flash memory module interfaces with the system bus through a dedicated flash memory  
array controller. It supports a 64-bit data bus width at the system bus port, and a 128-bit read data interface to flash memory.  
The module contains four 128-bit prefetch buffers. Prefetch buffer hits allow no-wait responses. Buffer misses incur a 3 wait  
state response at 120 MHz.  
The flash memory module provides the following features  
1 MB of flash memory in unique multi-partitioned hard macro  
Sectorization: 16 KB + 2 × 48 KB + 16 KB + 2 × 64 KB + 2 × 128 KB + 2 × 256 KB  
EEPROM emulation (in software) within same module but on different partition  
16 KB test sector and 16 KB shadow sector for test, censorship device and user option bits  
Wait states:  
— 3 wait states at 120 MHz  
— 2 wait states at 80 MHz  
— 1 wait state at 60 MHz  
Flash memory line 128-bit wide with 8-bit ECC on 64-bit word (total 144 bits)  
Accessed via a 64-bit wide bus for write and a 128-bit wide array for read operations  
1-bit error correction, 2-bit error detection  
1.5.6  
On-Chip SRAM with ECC  
The PXS20 SRAM provides a general-purpose single port memory.  
ECC handling is done on a 32-bit boundary for data and it is extended to the address to have the highest possible diagnostic  
coverage including the array internal address decoder.  
The SRAM module provides the following features:  
System SRAM: 128 KB  
PXS20 Microcontroller Data Sheet, Rev. 1  
Freescale Semiconductor  
9
Preliminary—Subject to Change Without Notice  

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