Datasheet > PN2222TF

PN2222TF

更新时间： 2023-09-03 20:27:09

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	148K
描述
General Purpose Transistor

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PN2222TF 数据手册

DATA SHEET

www.onsemi.com

NPN Epitaxial Silicon

Transistor

General Purpose Transistor

TO−92−3

CASE 135AR

PN2222

1. Emitter

2. Base

3. Collector

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING DIAGRAM

Parameter

Collector−Base Voltage

Collector−Emitter Voltage

Emitter−Base Voltage

Collector Current

Symbol

Value

Unit

CBO

CEO

EBO

APN

2222

YWW

600

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

625

150

PN2222 = Specific Device Code

STG

−55 to 150

= Assembly Location

= Year

WW = Work Week

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

September, 2022 − Rev. 3

PN2222T/D

12 3 4

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