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PN2369

更新时间： 2024-11-26 06:04:31
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飞兆/仙童 - FAIRCHILD 晶体开关晶体管
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4页 31K
描述
NPN Switching Transistor

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PN2369 数据手册

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PN2369  
NPN Switching Transistor  
•
This device is designed for high speed saturated switching at collector  
currents of 10mA to 100mA.  
•
Sourced from process 21.  
TO-92  
1. Emitter 2. Base 3. Collector  
1
Absolute Maximum Ratings* T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
15  
Units  
V
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
CEO  
40  
V
CBO  
EBO  
4.5  
V
I
- Continuous  
200  
mA  
°C  
C
T , T  
Operating and Storage Junction Temperature Range  
-55 ~ 150  
J
STG  
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These rating are based on a maximum junction temperature of 150 degrees C.  
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Max.  
Units  
Off Characteristics  
V
V
V
V
Collector-Emitter Breakdown Voltage *  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
I
I
I
I
= 10mA, I = 0  
15  
40  
40  
4.5  
V
V
V
V
(BR)CEO  
(BR)CES  
(BR)CBO  
(BR)EBO  
CBO  
C
C
C
E
B
= 10µA, V = 0  
BE  
= 10µA, I = 0  
E
= 10µA, I = 0  
C
I
V
V
= 20V, I = 0  
0.4  
30  
µA  
µA  
CB  
CB  
E
= 20V, I = 0, T = 125°C  
E
a
On Characteristics  
h
DC Current Gain *  
I
I
= 10mA, V = 1.0V  
40  
20  
120  
FE  
C
C
CE  
= 100mA, V = 2.0V  
CE  
V
V
Collector-Emitter Saturation Voltage *  
Base-Emitter Saturation Voltage  
I
I
= 10mA, I = 1.0mA  
0.25  
0.85  
V
V
CE(sat)  
C
C
B
= 10mA, I = 1.0mA  
0.7  
BE(sat)  
B
Small Signal Characteristics  
C
C
Output Capacitance  
Input Capacitance  
V
V
= 5.0V, I = 0, f = 1.0MHz  
4.0  
5.0  
pF  
pF  
obo  
ibo  
fe  
CB  
EB  
E
= 0.5V, I = 0, f = 1.0MHz  
C
h
Small -Signal Current Gain  
I = 10mA, V = 10V, R = 2.0kΩ,  
C CE G  
5.0  
f = 100MHz  
Switching Characteristics  
t
t
t
Storage Time  
Turn-On Time  
Turn-Off Time  
I
= I = I = 10mA  
13  
12  
18  
ns  
ns  
ns  
s
B1  
B2  
C
V
V
= 3.0V, I = 10mA, I = 3.0mA  
C B1  
on  
off  
CC  
= 3.0V, I = 10mA, I = 3.0mA,  
CC  
C
B1  
I
= 1.5mA  
B2  
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%  
©2004 Fairchild Semiconductor Corporation  
Rev. A, January 2004  
1234

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