Datasheet > PMEG100T10ELXD

PMEG100T10ELXD

更新时间： 2023-09-03 20:32:49

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	250K
描述
100 V, 1 A Trench Schottky barrier rectifierProduction

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PMEG100T10ELXD

100 V, 1 A Trench Schottky barrier rectifier

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_(BR)R

reverse breakdown

voltage

I_R= 1 mA; pulsed; T_j= 25 °C

[1]

100

V_F

forward voltage

I_F= 0.1 A; pulsed; T_j= 25 °C

I_F= 0.5 A; pulsed; T_j= 25 °C

I_F= 1 A; pulsed; T_j= 25 °C

[1]

455

600

720

590

0.1

0.15

0.6

515

695

795

665

0.5

0.6

µA

I_F= 1 A; pulsed; T_j= -40 °C

I_F= 1 A; pulsed; T_j= 125 °C

V_R= 100 V; pulsed; T_j= 25 °C

V_R= 100 V; pulsed; T_j= 125 °C

V_R= 100 V; pulsed; T_j= 150 °C

V_R= 1 V; f = 1 MHz; T_j= 25 °C

V_R= 10 V; f = 1 MHz; T_j= 25 °C

I_R

reverse current

C_d

t_rr

diode capacitance

reverse recovery time I_F= 0.5 A; I_R= 1 A; I_R(meas)= 0.25 A;

step recovery T_j= 25 °C

2.5

reverse recovery time dI_F/dt = 100 A/µs; I_F= 1 A; V_R= 30 V;

ramp recovery

T_j= 25 °C

I_RM

peak reverse recovery

current

0.275

Q_rr

reverse recovery

charge

V_FRM

peak forward recovery I_F= 0.5 A; dI_F/dt = 20 A/µs; T_j= 25 °C

voltage

600

[1] Very short pulse, in order to maintain a stable junction temperature.

PMEG100T10ELXD

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Product data sheet

1 April 2022

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