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PM50CSD120 PDF预览

PM50CSD120

更新时间: 2024-11-20 06:04:19
品牌 Logo 应用领域
三菱 - MITSUBISHI 电动机控制局域网
页数 文件大小 规格书
8页 133K
描述
FLAT-BASE TYPE INSULATED PACKAGE

PM50CSD120 数据手册

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MITSUBISHI<INTELLIGENTPOWER MODULES>
PM50CSD120
FLAT-BASETYPE
INSULATEDPACKAGE
PM50CSD120  
FEATURE  
a) Adopting new 4th generation planar IGBT chip, which per-  
formance is improved by 1µm fine rule process.  
b) Using new Diode which is designed to get soft reverse  
recovery characteristics.  
c) Keeping the package compatibility.  
The layout/position of both terminal pin and mounting hole  
is same as S-series 3rd generation IPM.  
• 3φ 50A, 1200V Current-sense IGBT for 15kHz switching  
• Monolithic gate drive & protection logic  
• Detection, protection & status indication circuits for over-  
current, short-circuit, over-temperature & under-voltage  
(P-Fo available from upper leg devices)  
• Acoustic noise-less 5.5/7.5kW class inverter application  
• UL Recognized  
Yellow Card No.E80276(N)  
FileNo.E80271  
APPLICATION  
General purpose inverter, servo drives and other motor controls  
PACKAGE OUTLINES  
Dimensions in mm  
110±1  
95±0.5  
Screwing depth  
Min9.0  
3-2  
3-2  
3-2  
6-2  
17.02  
3.22  
10  
10  
10  
4-φ5.5  
MOUNTING HOLES  
Terminal code  
1. VUPC 11. WP  
1 2 3 4  
5 6 7 8  
9
11  
13  
15 17 19  
14 16 18  
10 12  
2. UFO  
3. UP  
12. VWP1  
13. VNC  
4. VUP1 14. VN1  
5. VVPC 15. NC  
6. VFO  
7. VP  
16. UN  
17. VN  
8. VVP1 18. WN  
9. VWPC 19. Fo  
10. WFO  
12  
φ2.54  
W
V
U
3-2  
3.22  
0.5±0.3  
4-R6  
0.5  
21.2  
24.5  
26  
26  
22+01..50  
6-M5NUTS  
2-φ2.54  
66.44  
19- 0.5  
A
A : DETAIL  
LABEL  
Jul. 2005  

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TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 50A I(C)