Datasheet > PKN0008

PKN0008

更新时间： 2024-09-27 01:25:27

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PACELEADER		/
页数	文件大小	规格书
5页	1394K
描述
N-Ch 100V Fast Switching MOSFETs

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PKN0008 数据手册

PKN0008

N-Ch 100V Fast Switching MOSFETs

 Green Device Available

 Super Low Gate Charge

 Excellent Cdv/dt effect decline

 Advanced high cell density Trench

technology

Product Summary

BVDSS

RDSON

100V

310mΩ

1.2A

Description

SOT23 Pin Configuration

The PKN0008 is the high cell density trenched

N-ch MOSFETs, which provides excellent RDSON

and efficiency for most of the small power

switching and load switch applications.

The PKN0008 meet the RoHS and Green Product

requirement with full function reliability approved.

Absolute Maximum Ratings

Symbol

V_DS

Parameter

Rating

100

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current, V_GS@ 10V¹

Pulsed Drain Current²

1.2

P_D@T_A=25℃

T_STG

Total Power Dissipation³

℃

Storage Temperature Range

-55 to 150

T_J

Operating Junction Temperature Range

Thermal Data

Symbol

R_θJA

Parameter

Typ.

---

Max.

125

Unit

℃/W

Thermal Resistance Junction-ambient ¹

Thermal Resistance Junction-Case¹

R_θJC

---

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PKN0014	PACELEADER	获取价格	N-Ch 100V Fast Switching MOSFETs
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PKN022AA	SPSEMI	获取价格	Glass passiated junction
PKN022CA	SPSEMI	获取价格	Glass passiated junction
PKN024AA	SPSEMI	获取价格	Glass passiated junction
PKN024CA	SPSEMI	获取价格	Glass passiated junction
PKN030AA	SPSEMI	获取价格	Glass passiated junction
PKN030CA	SPSEMI	获取价格	Glass passiated junction