PFM120-S THRU PFM1100-S
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 100V
Package outline
Features
SMA-S
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
0.213(5.4)
0.197(5.0)
• Low profile surface mounted application in order to
0.012(0.3) Typ.
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
0.063(1.6)
0.055(1.4)
0.106(2.7)
0.091(2.3)
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
Pb-Free package is available
0.071(1.8)
0.060(1.5)
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
0.040(1.0) Typ.
0.040 (1.0) Typ.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, DO-214AC / SMA-S
Dimensions in inches and (millimeters)
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.05 gram
Maximum ratings and Electrical Characteristics (AT TA=25oC unless otherwise noted)
MAX.
UNIT
A
MIN.
TYP.
PARAMETER
CONDITIONS
Symbol
IO
1.0
Forward rectified current
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
IFSM
30
Forward surge current
A
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
0.5
10
IR
Reverse current
mA
f=1MHz and applied 4V DC reverse voltage
Diode junction capacitance
Storage temperature
120
CJ
pF
OC
-65
+175
TSTG
Operating
*1
*3
*4
*2
VRMS
VR
VF
SYMBOLS
VRRM
(V)
temperature
TJ, (OC)
(V)
(V)
(V)
20
30
40
50
14
21
28
35
42
56
70
PFM120-S
PFM130-S
PFM140-S
20
30
40
50
60
*1 Repetitive peak reverse voltage
*2 RMS voltage
0.50
-55 to +125
-55 to +150
PFM150-S
PFM160-S
PFM180-S
PFM1100-S
0.70
0.85
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=1.0A
60
80
80
100
100
1
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