Datasheet > PF515BM

PF515BM

更新时间： 2024-09-28 17:15:51

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	253K
描述
SOT-23

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中文翻译

获取价格

数据手册

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PF515BM 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

PF515BM

NIKO-SEM

SOT-23

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

150V

R_DS(ON)

I_D

G: GATE

D: DRAIN

S: SOURCE

0.8A

650mΩ

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

SYMBOL

LIMITS

±20

UNITS

V_GS

T_A= 25 °C

T_A= 70 °C

0.8

Continuous Drain Current

Pulsed Drain Current¹

Power Dissipation²

I_D

IDM

0.7

3.2

T_A= 25 °C

T_A= 70°C

1.25

P_D

0.8

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Ambient

100

146

t ≦10s

R_JA

°C/W

Junction-to-Ambient

Steady-State

¹Pulse width limited by maximum junction temperature.

²The Power dissipation is based on R_JAt ≦10s value.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

STATIC

UNIT

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

150

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_DS= 0V, V_GS= ±20V

1.3 1.8

2.3

±100 nA

K-5-5

REV1.0

12 3 4

中文翻译

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