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PF5000GR PDF预览

PF5000GR

更新时间: 2024-01-14 06:04:48
品牌 Logo 应用领域
WTE 测试二极管
页数 文件大小 规格书
2页 29K
描述
Rectifier Diode,

PF5000GR 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.69应用:GENERAL PURPOSE
外壳连接:ANODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:DO-21
JESD-30 代码:O-MUPF-P1最大非重复峰值正向电流:500 A
元件数量:1相数:1
端子数量:1最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:50 A
封装主体材料:METAL封装形状:ROUND
封装形式:PRESS FIT最大重复峰值反向电压:50 V
最大反向电流:5 µA反向测试电压:50 V
表面贴装:NO端子形式:PIN/PEG
端子位置:UPPERBase Number Matches:1

PF5000GR 数据手册

 浏览型号PF5000GR的Datasheet PDF文件第2页 
®
PF5000G – PF5006G  
50A GLASS PASSIVATED 1/2” PRESS-FIT DIODE  
WON-TOP ELECTRONICS  
Features  
Glass Passivated Die Construction  
Low Leakage  
Low Cost  
High Surge Current Capability  
Typical IR less than 5.0µA  
A
Anode +  
Mechanical Data  
DO-21  
Case: DO-21, Copper Case and Components  
Hermetically Sealed  
C
Dim  
A
Min  
15.65  
12.73  
1.25  
Max  
16.03  
12.82  
1.31  
11.00  
7.00  
Terminals: Contact Areas Readily Solderable  
Polarity: Cathode to Case (Reverse Units Are  
Available Upon Request and Are Designated  
By A “R” Suffix, i.e. PF5002GR or PF5004GR)  
Polarity: Red Color Equals Standard,  
Black Color Equals Reverse Polarity  
Mounting Position: Any  
B
F
C
D
10.55  
6.60  
E
D
F
28.00  
E
All Dimensions in mm  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 2  
B
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
PF  
PF  
PF  
PF  
PF  
PF  
PF  
Characteristic  
Symbol  
Unit  
5000G 5001G 5002G 5003G 5004G 5005G 5006G  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
300  
400  
280  
500  
350  
600  
420  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
210  
50  
V
A
Average Rectified Output Current @TC = 150°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
500  
1.0  
A
Forward Voltage  
@IF = 50A  
VFM  
IRM  
V
Peak Reverse Current  
@TA = 25°C  
5.0  
500  
µA  
At Rated DC Blocking Voltage  
@TA = 100°C  
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance (Note 2)  
Operating and Storage Temperature Range  
CJ  
400  
1.0  
pF  
°C/W  
°C  
RθJC  
TJ, TSTG  
-65 to +175  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
2. Thermal Resistance: Junction to case, single side cooled.  
© Won-Top Electronics Co., Ltd.  
Revision: October, 2018  
www.wontop.com  
1

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