Datasheet > PF48F5000M0Y3C0

PF48F5000M0Y3C0

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
英特尔 - INTEL		/
页数	文件大小	规格书
68页	1704K
描述
Memory IC

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PF48F5000M0Y3C0 数据手册

Intel StrataFlash^®Cellular Memory (M18)

Table 2.

List of Acronyms

Acronym

ETOX

Meaning

EPROM Tunnel Oxide

FDI

Intel^®Flash Data Integrator

Read Configuration Register (Flash)

Reserved for Future Use

RCR

RFU

SCSP

Stacked Chip Scale Package

1.4

Conventions

Table 3.

Datasheet Conventions

Convention

Meaning

Square brackets are used to designate group membership or to define a group of signals with a

similar function, such as A[21:1].

Group Membership Brackets

VCC vs. V_CC

When referring to a signal or package-connection name, the notation used is VCC. When

referring to a voltage level, the notation used is subscripted such as V_CC

This term is used interchangeably throughout this document to denote either a particular die, or

all die in the package.

Device

This is the method used to refer to more than one chip-enable or output enable. When each is

referred to individually, the reference is F1-CE# and F1-OE# (for die #1), and F2-CE# and F2-

OE# (for die #2).

F[3:1]-CE#,

F[2:1]-OE#

F-VCC

When referencing flash memory signals, the notation used is F-VCC or F-V_CC,respectively.

Denotes 16-bit hexadecimal numbers

00FFh

00FF 00FFh

Denotes 32-bit hexadecimal numbers

Intel StrataFlash^®Cellular Memory (M18)

July 2007

Document Number: 309823-009US

1...4 5 678 9 10...68

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