PDTC114TEF

更新时间： 2024-02-18 07:34:10

品牌	Logo	应用领域
恩智浦 - NXP		晶体小信号双极晶体管开关光电二极管
页数	文件大小	规格书
14页	90K
描述
PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = open

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技术参数
数据手册

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PDTC114TEF 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	SC-70	包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.95
风险等级：	5.1	Is Samacsys：	N
其他特性：	BUILT IN BIAS RESISTANCE RATIO IS 4.7	最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	50 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	100	JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

PDTC114TEF 数据手册

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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

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Printed in The Netherlands

R75/06/pp14

Date of release: 2004 Aug 02

Document order number: 9397 750 13646

1...11 12 1314

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