Datasheet > PDM34078SA10QITY

PDM34078SA10QITY

更新时间： 2024-02-17 06:54:22

品牌	Logo	应用领域
IXYS		静态存储器
页数	文件大小	规格书
14页	318K
描述
SRAM

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技术参数
数据手册

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PDM34078SA10QITY 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.84

PDM34078SA10QITY 数据手册

PDM34078

Recommended DC Operating Conditions

Symbol

Description

Min.

Typ.

Max.

Unit

Supply Voltage

3.0

3.3

3.6

Supply voltage

CCQ

Supply Voltage

Commercial

Ambient Temperature

°C

DC Electrical Characteristics ^(V= 3.3V ± 0.3V, All Temperature Ranges)

Symbol

|I |

Description

Test Conditions

= 0V to V

Min.

Max.

Unit

Input Leakage Current

Output Leakage Current

Output Low Voltage

Output High Voltage

Input HIGH Voltage

–2

µA

Outputs Disabled, V = 0V to V

I/O CC

= Min., I = 8 mA

—

0.4

= Min., I = –5 mA

2.4

2.0

—

Vcc+0.3

(1)

Input LOW Voltage

–0.3

0.8

NOTES: 1. Undershoots to –2.0 for 10 ns are allowed once per cycle.

2. MODE, FT and ZZ pins have an internal pullup and exhibit an input leakage current of ±400 µA.

Power Supply Characteristics

Symbol Description

Test Conditions

-6 ns

-7 ns

-8 ns

-10 ns

-12 ns

Unit

Active Supply Current

Device Deselected

350

300

250

230

210

≤ V or ≥ V

= 0

IH, I/O

Standby Current:

Device Deselected

≤ V or ≥ V 0 MHz

IH,

All inputs static

Device Deselected

SB1

SB2

SB3

≤ 0.2V or ≥ V – 0.2V

All inputs static, 0 MHz

Device Deselected

≤ V or ≥ V

IL IH,

All inputs static

Sleep Mode

Standby Current:

Device Deselected

ZZ ≥ V – 0.2V

CCQ

Rev 1.0 - 5/01/98

1...4 5 678 9 10...14

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