是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-F2 | 针数: | 10 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 11 weeks | 风险等级: | 5.68 |
Is Samacsys: | N | 其他特性: | HIGH RELIABILITY |
外壳连接: | SOURCE | 配置: | SINGLE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (Abs) (ID): | 7 A |
最大漏极电流 (ID): | 7 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-F2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 165 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 95 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
PD55035S-E | STMICROELECTRONICS |
完全替代 |
RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs | |
PD55035-E | STMICROELECTRONICS |
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RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs | |
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RF POWER TRANSISTORS The LdmoST Plastic FAMILY |
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