Datasheet > PD55035STR1-E

PD55035STR1-E

更新时间： 2024-11-26 14:58:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
18页	326K
描述
35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor

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PD55035STR1-E 数据手册

PD55035STR1-E

Datasheet

35 W, 12.5 V, HF to 1 GHz RF power LDMOS transistor

Features

OUT

Order code

Frequency

Gain

Efficiency

PD55035STR1-E

500 MHz

12.5 V

35 W

16.9 dB

62%

•

Excellent thermal stability

Common source configuration

PowerSO-10RF

(straight lead)

P_OUT= 35 W with 16.9 dB at 500 MHz, 12.5 V

New RF plastic package

Pin connection

Description

Connection

Drain

The device is a common source N-channel, enhancement-mode lateral field-effect

RF power transistor. It is designed for high gain, broad band commercial and

industrial applications. It operates at 12 V in common source mode at frequencies

of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s

latest LDMOS technology mounted in the first true SMD plastic RF power package,

PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for

car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability,

is the first ST JEDEC approved, high power SMD package. It has been specially

optimized for RF needs and offers excellent RF performance and ease of assembly.

Source

Gate

Product status link

PD55035STR1-E

Product summary

Order code

Marking

PD55035STR1-E

PD55035S

PowerSO-10RF

(straight lead)

Package

Packing

Tape and reel

DS13938 - Rev 1 - March 2022

For further information contact your local STMicroelectronics sales office.

www.st.com

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