PHOTO DIODES 2.4; 3.6 mm
Model PD23-02
2.3 mm 0.2 mm
•Photodiodes PD23-02 are designed for detecting the radiation in the Middle
Infrared spectral range from 800 to 2300 nm. Heterostructures with the InGaAsSb
sensitive layer and the AlGaAsSb "window" are grown on GaSb substrates.
•Photodiodes PD23-02 are mounted in standard 5.4 mm package TO-18. They have
the photosensitive area with diameter of 200 mm. Fast response makes possible
their use for the detection of high frequency modulated laser or LED emission.
•Related products: PD23-02 can be used in optical pair with our LED16÷LED23
and LD200÷LD230. We offer the preamplifier model AM-04 suitable for PD23-02.
Package TO-18
Parameters
Min
2.30
0.9
Typ
2.30
1.0
Max
2.35
1.1
Cut-off wavelength, mm (at 10%)
Responsivity, A/W (l =1.95÷2.1mm)
0.5
1.0
1.5
30
10
1
1.0
2.0
3.0
60
20
3
2.0
3.0
5.0
100
30
Dark Current, mA
( V= - 0.2 V )
( V= - 0.5 V )
( V= - 1.0 V )
(V= -10 mV)
(V=0, f=1 MHz)
Impedance, kOhm
Capacitance, pF
Rise and Fall Time, ns (V=0, 50 Ohm)
5
Detectivity, cm.Hz1/2 /W (l ,1000,1)
4.1010
5.1010
8.1010
p
Operating Temperature
Range, oC
-40¸ +50
200
260 oC
Sensitive area diameter, mm
Soldering temperature
Package
TO-18
Spectral Response
Typical characteristic t= + 25C
PD23-02
Basic Circuit Connections
Cf
100
80
60
40
20
0
AlGaAsSb
PD23
Rf
Iph
GaSb
(substr.)
GaInAsSb
Output voltage
PD23-02
Vout= -
(Iph*Rf)
0,8
1,3
1,8
2,3
Wavelength, mm
Te mpe ra ture de pe nda nce of cut-off
Typica l cha ra cte ris tics
PD23-
t= + 20C
Spectral Response
Typical characteristic
Capacitance vs. Reverse Voltage
PD23-02
PD23-02
18
Typical characteristic
1 0 0
8 0
10
T= 300 K
T=+2 3
C
16
1
0,1
T= - 4 3
C
14
12
10
8
6 0
T= - 1 1 3
C
T=300 K
T=230 K
T=160 K
4 0
0,01
0,001
2 0
0
0,0001
0
0
0,2
0,4
0,6
0,8
1
1,6
1,8
2
2,2
2,4
2,6
2,8
0,5
1
1,5
2
2,5
3
Reverse Voltage (V)
Wa ve le ngth,
m
m
Reverse bias, U, Volts