Datasheet > PBLS1504Y-Q

PBLS1504Y-Q

更新时间： 2024-03-03 10:10:49

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	244K
描述
15 V 500 mA PNP/NPN loadswitch double transistorProduction

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PBLS1504Y-Q 数据手册

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PBLS1504Y-Q

15 V 500 mA PNP/NPN loadswitch double transistor

001aaa181

001aaa185

600

- 10

(mV)

CEsat

(1)

400

200

- 10

(2)

(3)

(2)

(3)

- 10

- 1

- 10

- 1

- 10

- 1

- 10

- 1

- 10

(mA)

I (mA)

V_CE= −2 V

I_C/I_B= 20

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= -55 °C

Fig. 1. TR1 (PNP): DC current gain as a function of

collector current; typical values

Fig. 2. TR1 (PNP): Collector-emitter saturation voltage

as a function of collector current; typical values

001aaa183

001aaa184

- 1100

- 1200

BEsat

(mV)

- 900

- 1000

(1)

(2)

(1)

(2)

- 700

- 500

- 300

- 100

- 800

- 600

- 400

- 200

(3)

- 1

- 10

- 1

- 10

- 1

- 10

- 1

- 10

(mA)

I (mA)

V_CE= −2 V

I_C/I_B= 20

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 150 °C

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= -55 °C

Fig. 3. TR1 (PNP): Base-emitter voltage as a function

of collector current; typical values

Fig. 4. TR1 (PNP): Base-emitter saturation voltage as a

function of collector current; typical values

PBLS1504Y-Q

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Product data sheet

1 June 2023

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