Datasheet > P6KE510-B

P6KE510-B

更新时间： 2023-01-02 21:30:01

品牌	Logo	应用领域
力特 - LITTELFUSE		电视
页数	文件大小	规格书
6页	995K
描述
TVS DIODE

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P6KE510-B 数据手册

TransientVoltage Suppression Diodes

Axial Leaded – 600W > P6KE series

RoHS

P6KE Series

Description

Bi-directional

The P6KE Series is designed speciﬁcally to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Features

• V_BR@T_J= V_BR@25°C × (1+αT • ESD protection of data

Uni-directional

lines in accordance with

IEC 61000-4-2 (IEC801-2)

x (T_J- 25))

(αT:Temperature Coefﬁcient)

• EFT protection of data

lines in accordance with

IEC 61000-4-4 (IEC801-4)

• Low incremental surge

resistance

• Glass passivated chip

junction in DO-15 Package

• 600W peak pulse

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Fast response time:

typically less than 1.0ps

from 0 Volts to BV min

Agency Approvals

AGENCY

AGENCY FILE NUMBER

E128662/E230531

• Typical I_Rless than 1μA

above 13V

• High temperature

soldering guaranteed:

260°C/40 seconds /

0.375”,(9.5mm) lead

length, 5 lbs., (2.3kg)

tension

• Plastic package has

underwriters laboratory

ﬂammability classiﬁcation

94V-O

Maximum Ratings andThermal Characteristics

(T_A=25°C unless otherwise noted)

• Excellent clamping

capability

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC-61000-4-2 ESD

Parameter

Symbol

P_PPM

Value

600

Unit

Peak Pulse Power Dissipation by

10/1000μsTest Waveform (Fig.2)

(Note 1)

Steady State Power Dissipation on

Iniﬁnite Heat Sink atT_L=75ºC (Fig. 6)

P_D

5.0

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave Unidirectional

Only (Note 2)

Maximum Instantaneous Forward

Voltage at 50A for Unidirectional

Only (Note 3)

I_FSM

100

15kV(Air), 8kV (Contact)

V_F

3.5/5.0

Applications

Operating Junction and Storage

Temperature Range

T_J, T_STG-55 to 150

°C

TVS devices are ideal for the protection of I/O interfaces,

_CCbus and other vulnerable circuits used in telecom,

computer, industrial and consumer electronic applications.

TypicalThermal Resistance Junction

to Lead

R_uJL

R_uJA

°C/W

TypicalThermal Resistance Junction

to Ambient

Notes:

1. Non-repetitive current pulse , per Fig. 3 and derated aboveT_A= 25°C per Fig. 2.

2. Measured on 8.3ms single half sine wave or equivalent square wave, duty cycle=4 per

minute maximum.

3. V_F<3.5V for devices of V_BR<_ 200V and V_F< 5.0V for devices of V_BR>_ 201V.

Additional Information

Functional Diagram

Datasheet

Resources

Samples

Bi-directional

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 04/10/14

12 3 4 5 6

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