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P6KE30A

更新时间： 2024-02-03 07:24:33
品牌 Logo 应用领域
优恩 - UNSEMI 局域网二极管
页数 文件大小 规格书
6页 644K
描述
Axial Lead Transient Voltage Suppressors

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P6KE30A 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：O-PALF-W2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.28其他特性：EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE, PRSM-MIN
最大击穿电压：31.5 V最小击穿电压：28.5 V
击穿电压标称值：30 V外壳连接：ISOLATED
最大钳位电压：41.4 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-15JESD-30 代码：O-PALF-W2
最大非重复峰值反向功率耗散：600 W元件数量：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
极性：UNIDIRECTIONAL最大功率耗散：5 W
最大重复峰值反向电压：25.6 V子类别：Transient Suppressors
表面贴装：NO技术：AVALANCHE
端子形式：WIRE端子位置：AXIAL

P6KE30A 数据手册

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Axial Lead Transient Voltage Suppressors (TVS)  
P6KE Series  
6.8 To 600 V  
600W  
Uni-directional  
Bi-directional  
Description  
The P6KE series is designed specifically to protect sensitive electronic  
equipment from voltage transients induced by lightning and other transient  
voltage events.  
Features  
u
Glass passivated chip junction in DO-15 Package  
Low leakage  
u
u
u
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Uni and Bidirectional unit  
Excellent clamping capability  
600W Peak power capability at 10 × 1000µs waveform Repetition rate  
(duty cycle):0.01%  
u
u
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Fast response time: typically less than 1.0ps from 0 Volts to VBR min  
Typical IR less than 5μA above 12V.  
High Temperature soldering: 260°C/40 seconds at terminals  
Typical maximum temperature coefficient ΔVBR = 0.1% ×  
VBR@25°C× ΔT  
Functional Diagram  
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u
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Plastic package has Underwriters Laboratory Flammability 94V-0  
Matte tin lead–free Plated  
Halogen free and RoHS compliant  
Typical failure mode is short from over-specified voltage or current  
Whisker test is conducted based on JEDEC JESD201A per its table  
4a and 4c  
Bi-directional  
Cathode  
Anode  
u
u
IEC-61000-4-2 ESD 15kV(Air), 8kV (Contact)  
ESD protection of data lines in accordance with IEC 61000-4-2  
(IEC801-2)  
Uni-direction  
u
EFT protection of data lines in accordance with IEC 61000-4-4  
(IEC801-4)  
Applications  
TVS devices are ideal for the protection of I/O interfaces, VCC bus and other  
vulnerable circuits used in Telecom, Computer, Industrial and Consumer  
electronic applications.  
Maximum Ratings (TA=25℃ unless otherwise noted)  
Parameter  
Symbol  
Value  
600  
Unit  
Peak Pulse Power Dissipation with a 10/1000µs waveform (Fig.1)(Note  
1), (Note 2)  
PPPM  
Watts  
Peak Pulse Current with a 10/1000µs waveform.(Note1,Fig.3)  
Power Dissipation on Infinite Heat Sink at TL=75°C  
Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3)  
Maximum Instantaneous Forward Voltage at 25A for Unidirectional Only  
(Note 4)  
IPP  
PM(AV)  
IFSM  
See Next Table  
Amps  
Watt  
5.0  
100  
Amps  
VF  
3.5/5.0  
Voltage  
Operating junction and Storage Temperature Range.  
TJ , TSTG  
-55 to +150  
°C  
Notes:  
1. Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2.  
2. Mounted on 5.0mm x 5.0mm (0.03mm thick) Copper Pads to each terminal.  
3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle = 4 pulses per minutes maximum.  
4. VF < 3.5V for VBR < 200V and VF< 6.5V for VBR > 201V.  
UN Semiconductor Co., Ltd.  
www.unsemi.com.tw  
@ UN Semiconductor Co., Ltd. 2013  
Revision October 18, 2013  
1 / 6  
Specifications are subject to change without notice.  
Please refer to www.unsemi.com.tw for current information.  
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