5秒后页面跳转
P6KE15-E3/73 PDF预览

P6KE15-E3/73

更新时间: 2024-01-28 01:34:54
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
6页 93K
描述
Trans Voltage Suppressor Diode, 600W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN

P6KE15-E3/73 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-15包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.71其他特性:UL RECOGNIZED
最大击穿电压:16.5 V最小击穿电压:13.5 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-204ACJESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值反向功率耗散:600 W
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT APPLICABLE
极性:UNIDIRECTIONAL最大功率耗散:5 W
认证状态:Not Qualified最大重复峰值反向电压:12.1 V
表面贴装:NO技术:AVALANCHE
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

P6KE15-E3/73 数据手册

 浏览型号P6KE15-E3/73的Datasheet PDF文件第1页浏览型号P6KE15-E3/73的Datasheet PDF文件第2页浏览型号P6KE15-E3/73的Datasheet PDF文件第4页浏览型号P6KE15-E3/73的Datasheet PDF文件第5页浏览型号P6KE15-E3/73的Datasheet PDF文件第6页 
P6KE6.8A thru P6KE540A  
Vishay General Semiconductor  
www.vishay.com  
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
20  
UNIT  
Typical thermal resistance, junction to lead  
Typical thermal resistance, junction to ambient  
RJL  
°C/ W  
RJA  
75  
ORDERING INFORMATION (Example)  
PREFERRED PIN  
P6KE6.8A-E3/54  
P6KE6.8AHE3/54 (1)  
UNIT WEIGHT (g)  
PREFERRED PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
0.432  
54  
54  
4000  
4000  
13" diameter paper tape and reel  
13" diameter paper tape and reel  
0.432  
Note  
(1) AEC-Q101 qualified  
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)  
100  
10  
1
150  
TJ = 25 °C  
Pulse Width (td)  
is defined as the Point  
where the Peak Current  
decays to 50 % of IPPM  
Non-Repetitive Pulse  
Waveform shown in Fig. 3  
TA = 25 °C  
tr = 10 µs  
Peak Value  
IPPM  
100  
50  
0
Half Value - IPP  
IPPM  
2
10/1000 µs Waveform  
as defined by R.E.A.  
td  
0.1  
0.1 µs  
100 µs  
d - Pulse Width (s)  
1.0 ms  
10 ms  
1.0  
3.0  
4.0  
1.0 µs  
0
2.0  
10 µs  
t
t - Time (ms)  
Fig. 1 - Peak Pulse Power Rating Curve  
Fig. 3 - Pulse Waveform  
100  
6000  
1000  
Measured at  
Zero Bias  
75  
50  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
100  
10  
Measured at Stand-Off  
Voltage VWM  
25  
0
0
25  
50  
75  
100  
125  
150 175  
200  
1.0  
10  
VBR - Breakdown Voltage (V)  
100  
200  
TJ - Initial Temperature (°C)  
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature  
Fig. 4 - Typical Junction Capacitance Uni-Directional  
Revision: 18-Sep-12  
Document Number: 88369  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与P6KE15-E3/73相关器件

型号 品牌 描述 获取价格 数据表
P6KE15E3/TR MICROSEMI Trans Voltage Suppressor Diode, 600W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, RO

获取价格

P6KE15G ONSEMI 600 Watt Peak Power Surmetic TM -40 Transient Voltage Suppressors

获取价格

P6KE15-G COMCHIP 600W Transient Voltage Suppressor

获取价格

P6KE15-G SENSITRON Trans Voltage Suppressor Diode, 600W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, DO

获取价格

P6KE15GP CHENMKO 暂无描述

获取价格

P6KE15-GT3 SENSITRON Trans Voltage Suppressor Diode, 600W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, DO

获取价格