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P4SMA250A-61 PDF预览

P4SMA250A-61

更新时间: 2024-01-07 18:45:02
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管
页数 文件大小 规格书
4页 80K
描述
Trans Voltage Suppressor Diode, 400W, 214V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, PLASTIC, SMA, 2 PIN

P4SMA250A-61 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:DO-214AC包装说明:R-PDSO-C2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.72Is Samacsys:N
最大击穿电压:263 V最小击穿电压:237 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e0
最大非重复峰值反向功率耗散:400 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:1 W认证状态:Not Qualified
最大重复峰值反向电压:214 V表面贴装:YES
技术:AVALANCHE端子面层:TIN LEAD
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

P4SMA250A-61 数据手册

 浏览型号P4SMA250A-61的Datasheet PDF文件第1页浏览型号P4SMA250A-61的Datasheet PDF文件第2页浏览型号P4SMA250A-61的Datasheet PDF文件第4页 
P4SMA Series  
Vishay Semiconductors  
formerly General Semiconductor  
Ratings and  
Characteristic Curves (TA = 25°C unless otherwise noted)  
Fig. 2 Pulse Derating Curve  
Fig. 1 Peak Pulse Power Rating Curve  
100  
100  
Non-repetitive Pulse  
Waveform shown in Fig. 3  
TA = 25°C  
75  
50  
10  
P4SMA100A --  
P4SMA220A  
P4SMA6.8A --  
P4SMA91A  
1
25  
0
0.2 x 0.2" (5.0 x 5.0mm)  
Copper Pad Areas  
0.2 x 0.2" (5.0 x 5.0mm)  
Copper Pad Areas  
0.1  
25  
50  
75  
150  
175  
200  
0
100  
125  
0.1µs  
1.0µs  
10µs  
100µs  
1.0ms  
10ms  
td — Pulse Width (sec.)  
TA — Ambient Temperature (°C)  
Fig. 4 Typical Junction Capacitance  
Fig. 3 Pulse Waveform  
10,000  
1,000  
100  
150  
100  
50  
TJ = 25°C  
f = 1.0MHz  
Vsig = 50mVp-p  
TJ = 25°C  
Pulse Width (td)  
tr = 10µsec.  
is defined as the point  
Peak Value  
IPPM  
where the peak current  
decays to 50% of IPPM  
Measured at  
Stand-Off  
Voltage, VWM  
Uni-Directional  
Half Value — IPP  
IPPM  
2
Bi-Directional  
10/1000µsec. Waveform  
as defined by R.E.A.  
td  
10  
0
1.0  
3.0  
4.0  
1
10  
100  
200  
0
2.0  
V(BR) — Breakdown Voltage (V)  
t — Time (ms)  
Fig. 6 - Maximum Non-Repetitive Forward  
Surge Current Uni-Directional Only  
Fig. 5 Typical Transient Thermal  
Impedance  
1000  
200  
TJ = TJ max.  
8.3ms Single Half Sine-Wave  
(JEDEC Method)  
100  
50  
100  
10  
1
10  
0.001  
0.01  
0.1  
1
10  
100  
1000  
1
5
10  
50  
100  
tp — Pulse Duration (sec)  
Number of Cycles at 60 Hz  
Document Number 88367  
17-Feb-04  
www.vishay.com  
3

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