Datasheet > P4SMA150A/61-E3

P4SMA150A/61-E3

更新时间： 2024-01-07 04:32:52

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
3页	52K
描述
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Transient Suppressor

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技术参数
数据手册

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P4SMA150A/61-E3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AC
包装说明：	PLASTIC, SMA, 2 PIN	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.62

P4SMA150A/61-E3 数据手册

P4SMA Series

Vishay Semiconductors

formerly General Semiconductor

Ratings and

Characteristic Curves (T_A= 25°C unless otherwise noted)

Fig. 2 – Pulse Derating Curve

Fig. 1 – Peak Pulse Power Rating Curve

100

Non-repetitive Pulse

Waveform shown in Fig. 3

T_A= 25°C

P4SMA100A --

P4SMA220A

P4SMA6.8A --

P4SMA91A

0.2 x 0.2" (5.0 x 5.0mm)

Copper Pad Areas

0.2 x 0.2" (5.0 x 5.0mm)

Copper Pad Areas

0.1

150

175

200

100

125

0.1µs

1.0µs

10µs

100µs

1.0ms

10ms

t_d— Pulse Width (sec.)

T_A— Ambient Temperature (°C)

Fig. 4 – Typical Junction Capacitance

Fig. 3 – Pulse Waveform

10,000

1,000

100

150

100

T_J= 25°C

f = 1.0MHz

Vsig = 50mVp-p

T_J= 25°C

Pulse Width (td)

tr = 10µsec.

is defined as the point

Peak Value

I_PPM

where the peak current

decays to 50% of I_PPM

Measured at

Stand-Off

Voltage, V_WM

Uni-Directional

Half Value — IPP

I_PPM

Bi-Directional

10/1000µsec. Waveform

as defined by R.E.A.

1.0

3.0

4.0

100

200

2.0

V_(BR)— Breakdown Voltage (V)

t — Time (ms)

Fig. 6 - Maximum Non-Repetitive Forward

Surge Current Uni-Directional Only

Fig. 5 – Typical Transient Thermal

Impedance

1000

200

T_J= T_Jmax.

8.3ms Single Half Sine-Wave

(JEDEC Method)

100

0.001

0.01

0.1

100

1000

100

t_p— Pulse Duration (sec)

Number of Cycles at 60 Hz

Document Number 88367

17-Feb-04

www.vishay.com

1 23

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