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P4SMA10CA

更新时间： 2024-01-09 22:10:27
品牌 Logo 应用领域
伯恩斯 - BOURNS 局域网光电二极管
页数 文件大小 规格书
5页 431K
描述
Trans Voltage Suppressor Diode, 400W, 8.55V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN

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P4SMA10CA 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMA, 2 PINReach Compliance Code：unknown
风险等级：5.11其他特性：EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
最大击穿电压：10.5 V最小击穿电压：9.5 V
击穿电压标称值：10 V最大钳位电压：14.5 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AC
JESD-30 代码：R-PDSO-C2最大非重复峰值反向功率耗散：400 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-65 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性：BIDIRECTIONAL最大功率耗散：3.3 W
最大重复峰值反向电压：8.55 V子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED

P4SMA10CA 数据手册

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Features  
Applications  
nꢀ RoHSꢀcompliant*ꢀandꢀhalogenꢀfree**  
nꢀ SurfaceꢀMountꢀSMAꢀpackage  
nꢀꢀBreakdownꢀVoltage:ꢀ6.8ꢀtoꢀ550ꢀvolts  
nꢀ PeakꢀPulseꢀPower:ꢀ400ꢀwatts  
nꢀ Typicalꢀtemperatureꢀcoefficient:ꢀ  
nꢀ IECꢀ61000-4-2ꢀESDꢀ(Min.ꢀLevelꢀ4)  
nꢀ IECꢀ61000-4-4ꢀEFT  
nꢀ IECꢀ61000-4-5ꢀSurge  
ꢀ
∆V =ꢀ0.1ꢀ%ꢀxꢀV @ꢀ25ꢀ°Cꢀxꢀ∆T  
BRꢀ BRꢀ  
P4SMAꢀTransientꢀVoltageꢀSuppressorꢀDiodeꢀSeriesꢀ  
General Information  
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop  
increasingly smaller electronic components.  
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AC (SMA)  
size format. The Transient Voltage Suppressor series offers a choice of Breakdown Voltages from 6.8 V up to 550 V. Typical fast response  
times are less than 1.0 picosecond for unidirectional devices and less than 5.0 picoseconds for bidirectional devices.  
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration  
minimizes roll away.  
Maximum Ratings (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
Value  
Unit  
(Note 1,2)  
Peak Pulse Power Dissipation (T = 1 ms)  
P
P
400  
Watts  
PK  
Peak Forward Surge Current  
8.3 ms Single Half Sine Wave Superimposed on Rated Load  
(JEDEC Method)  
I
40  
Amps  
FSM  
(Note 3)  
P4SMA6.8A ~ P4SMA200A  
P4SMA220A ~ P4SMA550A  
Instantaneous Forward Voltage @ 25 A  
(For Unidirectional Units Only)  
3.5  
5.0  
V
T
Volts  
F
Operating Temperature Range  
Storage Temperature Range  
-55 to +150  
-55 to +150  
°C  
°C  
J
T
STG  
1. Non-repetitive current pulse, per Pulse Waveform graph and derated above T = 25 °C per Pulse Derating Curve.  
A
2. Mounted on 5.0 mm x 5.0 mm copper pad to each terminal.  
3. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).  
How to Order  
P4SMA 6.8 CA  
Series  
P4SMA = SMA/DO-214AC  
Breakdown Voltage  
6.8 to 550 = 6.8 to 550 V  
(Volts)  
BD  
Suffix  
A = 5 % Tolerance Unidirectional Device  
CA = 5 % Tolerance Bidirectional Device  
Asia-Pacific:  
Tel: +886-2 2562-4117  
Fax: +886-2 2562-4116  
EMEA:  
Tel: +36 88 520 390  
Fax: +36 88 520 211  
The Americas:  
Tel: +1-951 781-5500  
Fax: +1-951 781-5700  
www.bourns.com  
*ꢀꢀRoHSꢀDirectiveꢀ2002/95/ECꢀJan.ꢀ27,ꢀ2003ꢀincludingꢀannexꢀandꢀRoHSꢀRecastꢀ2011/65/EUꢀJuneꢀ8,ꢀ2011.ꢀ  
**Bournsꢀconsidersꢀaꢀproductꢀtoꢀbeꢀ“halogenꢀfree”ꢀifꢀ(a)ꢀtheꢀBromineꢀ(Br)ꢀcontentꢀisꢀ900ꢀppmꢀorꢀless;ꢀ(b)ꢀtheꢀChlorineꢀ(Cl)ꢀcontentꢀisꢀ900ꢀppmꢀorꢀless;ꢀandꢀ(c)ꢀtheꢀtotalꢀBromineꢀ(Br)ꢀꢀ  
ꢀꢀꢀꢀandꢀChlorineꢀ(Cl)ꢀcontentꢀisꢀ1500ꢀppmꢀorꢀless.  
Specificationsꢀareꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.  
Theꢀdeviceꢀcharacteristicsꢀandꢀparametersꢀinꢀthisꢀdataꢀsheetꢀcanꢀandꢀdoꢀvaryꢀinꢀdifferentꢀapplicationsꢀandꢀactualꢀdeviceꢀperformanceꢀmayꢀvaryꢀoverꢀtime.  
Usersꢀshouldꢀverifyꢀactualꢀdeviceꢀperformanceꢀinꢀtheirꢀspecificꢀapplications.  
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P4SMA10CA 替代型号

型号 品牌 替代类型 描述 数据表
SMAJ8.5CA-E3/61 VISHAY

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 DIODE 300 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2
P4SMA10CA-E3/61 VISHAY

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 DIODE 300 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2
P4SMA10CA LITTELFUSE

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 Silicon Avalanche Diodes - 400W Surface Mount Transient Voltage Supressors

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P4SMA10CA/11-E3 VISHAY

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 		DIODE 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Transient S
P4SMA10CA/51 VISHAY

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 		Transient Suppressor,
P4SMA10CA/5A VISHAY

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 		Trans Voltage Suppressor Diode, 8.55V V(RWM), Bidirectional,
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 		Transient Suppressor,
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 		DIODE 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Transient S
P4SMA10CA-51 VISHAY

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 		Trans Voltage Suppressor Diode, 400W, 8.55V V(RWM), Bidirectional, 1 Element, Silicon, DO-
P4SMA10CA-61 VISHAY

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 		Trans Voltage Suppressor Diode, 400W, 8.55V V(RWM), Bidirectional, 1 Element, Silicon, DO-
P4SMA10CA-AU PANJIT

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 		SMA
P4SMA10CA-E3 VISHAY

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 		DIODE 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Transient S
P4SMA10CA-E3/11 VISHAY

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 		DIODE 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Transient S

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