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P4C422-20FM

更新时间： 2025-07-15 04:11:19

品牌	Logo	应用领域
PYRAMID		/
页数	文件大小	规格书
10页	208K
描述
HIGH SPEED 256 x 4 STATIC CMOS RAM

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中文翻译

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数据手册

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P4C422-20FM 数据手册

P4C422

HIGH SPEED 256 x 4

STATIC CMOS RAM

FEATURES

Separate I/O

High Speed (Equal Access and Cycle Times)

– 10/12/15/20/25/35 ns (Commercial)

– 15/20/25/35 ns (Military)

Fully TTL Compatible Inputs and Outputs

Resistant to single event upset and latchup

resulting from advanced process and design

improvements

CMOS for Low Power

– 495 mW Max. – 10/12/15/20/25 (Commercial)

– 495 mW Max. – 15/20/25/35 (Military)

Standard 22-pin 400 mil DIP, 24-pin 300 mil

SOIC, 24-pin square LCC package and 24-pin

CERPACK package

Single 5V±10% Power Supply

DESCRIPTION

The P4C422 is a 1,024-bit high-speed (10ns) Static

RAM with a 256 x 4 organization. The memory requires

no clocks or refreshing and has equal access and cycle

times. Inputs and outputs are fully TTL compatible.

Operation is from a single 5 Volt supply. Easy memory

expansion is provided by an active LOW chip select one

(CS₁) and active HIGH chip select two (CS₂) as well as

3-state outputs.

In addition to high performance and high density, the

device features latch-up protection, single event and

upset protection. The P4C422 is offered in several

packages: 22-pin 400 mil DIP (plastic and ceramic), 24-

pin 300 mil SOIC, 24-pin square LCC and 24-pin

CERPACK. Devicesareofferedinbothcommercialand

military temperature ranges.

PIN CONFIGURATIONS

FUNCTIONAL BLOCK DIAGRAM

SOIC (S4)

DIP (P3-1, C3-1, D3-1)

LCC (L4)

CERPACK (F3) SIMILAR

Document # SRAM101 REV. A

Revised October 2005

12 3 4 5 6 7...10

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