P4C164L-80P6ILF PDF预览

P4C164L-80P6ILF

更新时间: 2025-07-15 03:06:07
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PYRAMID /
页数 文件大小 规格书
11页 112K
描述
LOW POWER 8K x 8 STATIC CMOS RAM

P4C164L-80P6ILF 数据手册

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P4C164L  
RECOMMENDED OPERATING TEMPERATURE & SUPPLY VOLTAGE  
Temperature Range (Ambient)  
Commercial (0°C to 70°C)  
Supply Voltage  
4.5V VCC 5.5V  
4.5 VCC 5.5V  
Industrial (-40°C to 85°C)  
MAXIMUM RATINGS(1)  
Stresses greater than those listed can cause permanent damage to the device. These are absolute stress ratings  
only. Functional operation of the device is not implied at these or any other conditions in excess of those given in  
the operational sections of this data sheet. Exposure to Maximum Ratings for extended periods can adversely  
affect device reliability.  
Symbol  
VCC  
Parameter  
Supply Voltage with Respect to GND  
Terminal Voltage with Respect to GND (up to 7.0V)  
OperatingAmbient Temperature  
Min  
-0.5  
-0.5  
Max  
7.0  
Unit  
V
VTERM  
VCC + 0.5  
V
T
-55  
-65  
125  
150  
°C  
°C  
A
STG  
IOUT  
ILAT  
Storage Temperature  
Output Current into Low Outputs  
Latch-up Current  
25  
mA  
mA  
>200  
DC ELECTRICAL CHARACTERISTICS  
(Over Recommended Operating Temperature & Supply Voltage)(2)  
Max  
Parameter  
Unit  
Min  
Symbol  
Test Conditions  
Output High Voltage  
(I/O0 - I/O7)  
V
VOH  
IOH = –1mA, VCC = 4.5V  
2.4  
IOL = 2.1mA  
0.4  
VOL  
Output Low Voltage  
(I/O0 - I/O7)  
V
2.2  
VCC + 0.3  
0.8  
V
V
VIH  
VIL  
Input High Voltage  
Input Low Voltage  
-0.5(3)  
Input Leakage Current  
ILI  
µA  
µA  
+2  
+2  
GND VIN VCC  
Ind./Com.  
-2  
-2  
GND VOUT VCC Ind./Com.  
CE VIH  
ILO  
Output Leakage Current  
ISB  
VCC = 5.5V, IOUT = 0 mA  
VCC Current  
TTLStandby Current  
(TTL Input Levels)  
µA  
µA  
100  
3
CE1 = VIH or CE2 = VIL  
VCC Current  
VCC = 5.5V, IOUT = 0 mA  
ISB1  
CMOS Standby Current  
(CMOS Input Levels)  
CE1 VCC -0.2V or CE2 0.2V  
Notes:  
2. Extended temperature operation guaranteed with 400 linear feet per  
minute of air flow.  
3. Transient inputs with VIL and IIL not more negative than –3.0V and  
–100mA, respectively, are permissible for pulse widths up to 20ns.  
4. This parameter is sampled and not 100% tested.  
1. Stresses greater than those listed under MAXIMUM RATINGS may  
cause permanent damage to the device. This is a stress rating only  
and functional operation of the device at these or any other conditions  
above those indicated in the operational sections of this specification  
is not implied. Exposure to MAXIMUM rating conditions for extended  
periods may affect reliability.  
Document # SRAM116 REV B  
Page 2 of 11  

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