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P4C164L-35P6MLF PDF预览

P4C164L-35P6MLF

更新时间: 2023-05-15 00:00:00
品牌 Logo 应用领域
PYRAMID 静态存储器光电二极管
页数 文件大小 规格书
16页 1239K
描述
Standard SRAM, 8KX8, 35ns, CMOS, PDIP28, 0.600 INCH, ROHS COMPLIANT, PLASTIC, DIP-28

P4C164L-35P6MLF 数据手册

 浏览型号P4C164L-35P6MLF的Datasheet PDF文件第2页浏览型号P4C164L-35P6MLF的Datasheet PDF文件第3页浏览型号P4C164L-35P6MLF的Datasheet PDF文件第4页浏览型号P4C164L-35P6MLF的Datasheet PDF文件第6页浏览型号P4C164L-35P6MLF的Datasheet PDF文件第7页浏览型号P4C164L-35P6MLF的Datasheet PDF文件第8页 
P4C164 - ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAM  
TIMIꢀG WAVEFORM OF READ CYCLE ꢀO. 1 (OE COꢀTROLLED)(5)  
TIMIꢀG WAVEFORM OF READ CYCLE ꢀO. 2 (ADDRESS COꢀTROLLED)(5,6)  
TIMIꢀG WAVEFORM OF READ CYCLE ꢀO. 3 (CE1, CE2 COꢀTROLLED)(5,7,10)  
5. WE is HIGH for READ cycle.  
9. Read Cycle Time is measured from the last valid address to the first  
6. CE1 is LOW, CE2 is HIGH and OE is LOW for READ cycle.  
7. ADDRESS must be valid prior to, or coincident with CE1 transition LOW  
and CE2 transition HIGH.  
transitioning address.  
10. Transitions caused by a chip enable control have similar delays ir-  
respective of whether CE1 or CE2 causes them.  
8. Transition is measured ± 200 mV from steady state voltage prior to  
change,withloadingasspecifiedinFigure1. Thisparameterissampled  
and not 100% tested.  
Document # SRAM115 REV H  
Page 5  

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