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P4C164L-35LMLF PDF预览

P4C164L-35LMLF

更新时间: 2024-01-18 23:59:30
品牌 Logo 应用领域
PYRAMID 静态存储器内存集成电路
页数 文件大小 规格书
16页 1239K
描述
Standard SRAM, 8KX8, 35ns, CMOS, CQCC28, 0.350 X 0.550 INCH, ROHS COMPLIANT, CERAMIC, LCC-28

P4C164L-35LMLF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:QLCC
包装说明:QCCN,针数:28
Reach Compliance Code:compliantECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.01
最长访问时间:35 nsJESD-30 代码:R-CQCC-N28
长度:13.97 mm内存密度:65536 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:28
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:8KX8
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:QCCN
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.905 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:NO LEAD端子节距:1.27 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:8.89 mmBase Number Matches:1

P4C164L-35LMLF 数据手册

 浏览型号P4C164L-35LMLF的Datasheet PDF文件第4页浏览型号P4C164L-35LMLF的Datasheet PDF文件第5页浏览型号P4C164L-35LMLF的Datasheet PDF文件第6页浏览型号P4C164L-35LMLF的Datasheet PDF文件第8页浏览型号P4C164L-35LMLF的Datasheet PDF文件第9页浏览型号P4C164L-35LMLF的Datasheet PDF文件第10页 
P4C164 - ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAM  
TIMIꢀG WAVEFORM OF WRITE CYCLE ꢀO. 1 (WE COꢀTROLLED)(11)  
TIMIꢀG WAVEFORM OF WRITE CYCLE ꢀO. 2 (CE COꢀTROLLED)(11)  
Notes:  
11. CE and WE must be LOW, and CE2 HIGH for WRITE cycle.  
12. OE is LOW for this WRITE cycle to show tWZ and tOW  
14. Write Cycle Time is measured from the last valid address to the first  
.
transitioning address.  
13. If CE1 goes HIGH, or CE2 goes LOW, simultaneously with WE HIGH,  
the output remains in a high impedance state  
Document # SRAM115 REV H  
Page 7  

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