Datasheet > P4C164-70L32MB

P4C164-70L32MB

更新时间： 2023-01-03 00:34:14

品牌	Logo	应用领域
PYRAMID		静态存储器
页数	文件大小	规格书
16页	1239K
描述
Standard SRAM, 8KX8, 70ns, CMOS, CQCC32, 0.450 X 0.550 INCH, CERAMIC, LCC-32

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P4C164-70L32MB 数据手册

P4C164 - ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAM

MAꢁIMUM RATIꢀGS⁽¹⁾

RECOMMEꢀDED OPERATIꢀG COꢀDITIOꢀS

Sym Parameter

Value

Unit

Grade⁽²⁾

Ambient Temp

0°C to 70°C

GꢀD

V_CC

Power Supply Pin with

V_CC

Commercial

Industrial

Military

5.0V ± 10%

-0.5 to +7

Respect to GND

-40°C to +85°C

-55°C to +125°C

Terminal Voltage with

V_TERMRespect to GND (up to

7.0V)

-0.5 to VCC + 0.5

CAPACITAꢀCES⁽⁴⁾

T_A

Operating Temperature

-55 to +125

-65 to +150

1.0

°C

(V_CC= 5.0V, T_A= 25°C, f = 1.0MHz)

T_BIASTemperature Under Bias

T_STGStorage Temperature

Sym Parameter

Conditions Typ Unit

P_T

Power Dissipation

C_IN

Input Capacitance

V_IN=0V

I_OUTDC Output Current

C_OUT

Output Capacitance

V_OUT=0V

DC ELECTRICAL CHARACTERISTICS

(Over Recommended Operating Temperature & Supply Voltage)⁽²⁾

P4C164

P4C164L

Sym Parameter

Test Conditions

Unit

Min

2.2

Max

Min

2.2

Max

V_CC+ 0.5

0.8

V_IH

V_IL

Input High Voltage

Input Low Voltage

V_CC+ 0.5

0.8

-0.5⁽³⁾

V_CC- 0.2

-0.5⁽³⁾

V_CC- 0.2

-0.5⁽³⁾

V_HCCMOS Input High Voltage

V_LCCMOS Input Low Voltage

V_CC+ 0.5

0.2

V_CC+ 0.5

0.2

V_CDInput Clamp Diode Voltage

V_CC= Min, I_IN= -18 mA

I_OL= +8 mA, V_CC= Min

-1.2

V_OLOutput Low Voltage (TTL Load)

0.4

V_OHOutput High Voltage (TTL Load) I_OH= -4 mA, V_CC= Min

2.4

-10

-5

2.4

-5

MIL

IND/COM

MIL

+10

N/A

V_CC= Max,

V_IN= GND to V_CC

I_LI

Input Leakage Current

Output Leakage Current

µA

N/A

-5

-10

-5

+10

V_CC= Max, CE₁= V_IH,

V_OUT= GND to V_CC

I_LO

IND/COM

MIL

N/A

—

N/A

—

CE₁≥ V_IHor CE₂≤ V_IL,

Standby Power Supply Current

(TTL Input Levels)

I_SB

V_CC=Max, f=Max, Outputs Open

IND/COM

—

N/A

CE₁≥ V_HCor CE₂≤ V_LC,

V_CC= Max, f = 0, Outputs Open

V_IN≤ V_LCor V_IN≥ V_HC

MIL

—

Standby Power Supply Current

(CMOS Input Levels)

I_SB1

IND/COM

N/A

N/A = Not applicable

ꢀotes:

2. Extended temperature operation guaranteed with 400 linear feet per

minute of air ﬂow.

3. Transient inputs with V_ILand I_ILnot more negative than –3.0V and

–100mA, respectively, are permissible for pulse widths up to 20ns.

4. This parameter is sampled and not 100% tested.

1. Stresses greater than those listed under MAꢀIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this speciﬁcation

is not implied. Exposure to MAꢀIMUM rating conditions for extended

periods may affect reliability.

Document # SRAM115 REV H

Page 2

123 4 5 6 7...16

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P4C164-70LILF	PYRAMID	ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS	获取价格
P4C164-70LMB	PYRAMID	Standard SRAM, 8KX8, 70ns, CMOS, CQCC28, 0.350 X 0.550 INCH, CERAMIC, LCC-28	获取价格
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