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P2748_07

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
HAMAMATSU 光电
页数 文件大小 规格书
4页 85K
描述
MCT photoconductive detector

P2748_07 数据手册

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I N F R A R E D D E T E C T O R  
MCT photoconductive detector  
,
P2748/P5274 series P3257-50  
Dewar type detector with high sensitivity and high-speed response in long wavelength range  
Features  
Applications  
Choice of spectral response range (up to 25 µm)  
The band gap can be adjusted by controlling the composition  
ratio of HgTe and CdTe. Utilizing this fact, various types are  
available in different spectral characteristics.  
Photoconductive element that decreases its resistance  
by input of infrared light  
FTIR  
Infrared spectrophotometer  
Thermal imaging  
Remote sensing  
CO2 laser detection  
Micro-cooled type available  
This type of cooling does not require pour-filled liquid  
nitrogen.  
Custom devices available  
Custom devices not listed in this catalog are also available  
with different spectral response, active area sizes and  
number of elements.  
Accessories (Optional)  
Valve operator  
Amplifiers for dewar type MCT photoconductive detector  
C5185  
A3515  
Glass dewar type not requiring repumping is also provided.  
Infrared detector module with preamp  
P7752-10  
General rating / Absolute maximum ratings  
Absolute maximum ratings  
Nitrogen  
maintenance  
time  
Dimensional  
outline/  
Allowable  
current  
Operating  
temperature temperature  
Storage  
Active area  
Type No.  
Package  
Cooling  
Window  
m aterial *  
Min.  
(h)  
Topr  
(°C)  
Tstg  
(°C)  
1
(mA)  
40  
(mm)  
1 × 1  
1 × 1  
Side-on type metal dewar  
Head-on type metal dewar  
P2748-40  
/Z  
/Z  
P2748-41  
P2748-42  
P5274  
P5274-01  
P3257-50  
40  
LN2  
0.25 × 0.25  
1 × 1  
12  
-
20  
40  
20  
40  
-40 to +60  
-40 to +55  
-55 to +60  
-45 to +55  
/Z  
Side-on type metal dewar  
/K  
/Z  
1 × 1  
1 × 1  
Stirling type metal Micro-cooled  
Electrical and optical characteristics (Typ. unless otherwise noted)  
Measurement  
condition  
Element  
Peak  
Photo  
sensitivity *2  
S
Rise  
Dark  
resistance  
Cut-off  
sensitivity  
NEP  
λ=λp  
time  
tr  
0 to 63 %  
D
D
wav elength wavelength  
(500, 1200, 1)  
(λp, 1200, 1)  
temperature  
Rd  
λc  
λp  
Type No.  
λ=λp  
T
Min.  
Typ.  
(cm· Hz1/2/W) (cm· Hz1/2/W) (cm· Hz1/2/W)  
(°C)  
(µm)  
12  
(µm)  
14  
(V/W)  
1000  
1000  
10000  
500  
(W/Hz1/2)  
(µs)  
0.6  
()  
P2748-40  
2.5 × 10-12  
P2748-41  
P2748-42  
P5274  
P5274-01  
P3257-50  
1 × 1010  
2 × 1010  
4.0 × 1010 2.5 × 10-12  
6.3 × 10-12  
40  
-196  
14  
17  
12  
17  
22  
14  
2 × 109  
1 × 109  
1 × 1010  
1 × 1010  
5 × 109  
2 × 1010  
1.5 × 1010 6.7 × 10-12  
1.0 × 1010 1.0 × 10-11  
4.0 × 1010 2.5 × 10-12  
0.6  
0.4  
0.6  
30  
100  
40  
250  
1000  
*1: Window material K: KRS-5, Z: ZnSe  
*2: Photo sensitivity changes with the bias current. The values in the above table are measured with the optimum bias current.  
1

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