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P2103ACMC

更新时间： 2024-09-28 22:27:35
品牌 Logo 应用领域
力特 - LITTELFUSE 双向触发二极管
页数 文件大小 规格书
2页 124K
描述
Balanced Three-chip MicroCapacitance (MC) SIDACtor Device

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P2103ACMC 数据手册

 浏览型号P2103ACMC的Datasheet PDF文件第2页 
Balanced Three-chip MicroCapacitance (MC) SIDACtor Device  
Balanced Three-chip MicroCapacitance (MC)  
SIDACtor Device  
The balanced three-chip TO-220 MC SIDACtor solid state device protects telecommunica-  
tion equipment in high-speed applications that are sensitive to load values and that require  
a lower capacitance. CO values for the MC are 40% lower than a standard AC part.  
1
3
2
This MC SIDACtor series is used to enable equipment to meet various regulatory  
requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and  
TIA-968-A (formerly known as FCC Part 68) without the need of series resistors.  
Electrical Parameters  
V
V
V
V
S
DRM  
S
DRM  
Volts  
Volts  
Volts  
Volts  
Part  
V
I
I
I
I
C
O
T
DRM  
S
T
H
Number *  
Pins 1-2, 2-3  
Pins 1-3  
Volts  
µAmps  
mAmps  
800  
Amps  
2.2  
mAmps  
150  
pF  
40  
40  
40  
40  
30  
30  
30  
30  
P1553AC MC  
P1803AC MC  
P2103AC MC  
P2353AC MC  
P2703AC MC  
P3203AC MC  
P3403AC MC  
P5103AC MC  
130  
150  
170  
200  
230  
270  
300  
420  
180  
210  
250  
270  
300  
350  
400  
600  
130  
150  
170  
200  
230  
270  
300  
420  
180  
210  
250  
270  
300  
350  
400  
600  
8
8
8
8
8
8
8
8
5
5
5
5
5
5
5
5
800  
800  
800  
800  
800  
800  
800  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
2.2  
150  
150  
150  
150  
150  
150  
150  
* For surge ratings, see table below.  
General Notes:  
•
•
•
•
•
•
•
•
All measurements are made at an ambient temperature of 25 °C. I applies to -40 °C through +85 °C temperature range.  
PP  
PP  
Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.  
I
is a repetitive surge rating and is guaranteed for the life of the product.  
V
V
is measured at I  
DRM.  
DRM  
is measured at 100 V/µs.  
S
Special voltage (V and V  
) and holding current (I ) requirements are available upon request.  
H
S
DRM  
Off-state capacitance (C ) is measured between Pins 1-2 and 3-2 at 1 MHz with a 2 V bias.  
Device is designed to meet balance requirements of GTS 8700 and GR 974.  
O
Surge Ratings  
I
I
I
I
I
I
TSM  
PP  
PP  
PP  
PP  
PP  
2x10 µs  
8x20 µs  
10x160 µs  
10x560 µs  
10x1000 µs  
60 Hz  
Amps  
di/dt  
Series  
Amps  
Amps  
Amps  
Amps  
Amps  
Amps/µs  
C
500  
400  
200  
150  
100  
50  
500  
http://www.littelfuse.com  
+1 972-580-7777  
2 - 36  
© 2004 Littelfuse, Inc.  
SIDACtor® Data Book and Design Guide  
12

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