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P1200B PDF预览

P1200B

更新时间: 2024-09-23 03:44:27
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德欧泰克 - DIOTEC /
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2页 97K
描述
Silicon-Rectifiers

P1200B 数据手册

 浏览型号P1200B的Datasheet PDF文件第2页 
P1200A ... P1200G  
Version 2006-01-25  
P1200A ... P1200G  
Silicon-Rectifiers  
Silizium-Gleichrichter  
Nominal Current  
Nennstrom  
12 A  
Ø 8±0.1  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
50...400 V  
Plastic case  
Kunststoffgehäuse  
Ø 8 x 7.5 [mm]  
P600 Style  
Type  
Weight approx.  
Gewicht ca.  
1.3 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
Ø 1.2±0.05  
Standard packaging taped in ammo pack  
Standard Lieferform gegurtet in Ammo-Pack  
Dimensions - Maße [mm]  
Maximum ratings  
Grenzwerte  
Type  
Typ  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
VRRM [V]  
Surge peak reverse voltage  
Stoßspitzensperrspannung  
V
RSM [V]  
P1200A  
P1200B  
P1200D  
P1200G  
50  
100  
200  
400  
50  
100  
200  
400  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TA = 50°C  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
IFAV  
IFRM  
IFSM  
i2t  
12 A 1)  
80 A 1)  
Repetitive peak forward current  
Periodischer Spitzenstrom  
Peak forward surge current, 50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
400/450 A  
800 A2s  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
Junction temperature – Sperrschichttemperatur  
at reduced reverse voltage  
VR 80% VRRM  
VR 20% VRRM  
Tj  
Tj  
-50...+150°C  
-50...+200°C  
bei reduzierter Sperrspannung  
Storage temperature – Lagerungstemperatur  
TS  
-50...+175°C  
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case  
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1

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