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P1200D PDF预览

P1200D

更新时间: 2024-02-10 04:42:19
品牌 Logo 应用领域
德欧泰克 - DIOTEC /
页数 文件大小 规格书
2页 97K
描述
Silicon-Rectifiers

P1200D 技术参数

生命周期:Transferred零件包装代码:SIP
包装说明:IN-LINE, R-XSIP-T12针数:12
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.43配置:SEPARATE, 4 ELEMENTS
最大断态直流电压:100 VJESD-30 代码:R-XSIP-T12
通态非重复峰值电流:60 A元件数量:4
端子数量:12封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:IN-LINE
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
触发设备类型:SILICON SURGE PROTECTORBase Number Matches:1

P1200D 数据手册

 浏览型号P1200D的Datasheet PDF文件第2页 
P1200A ... P1200G  
Version 2006-01-25  
P1200A ... P1200G  
Silicon-Rectifiers  
Silizium-Gleichrichter  
Nominal Current  
Nennstrom  
12 A  
Ø 8±0.1  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
50...400 V  
Plastic case  
Kunststoffgehäuse  
Ø 8 x 7.5 [mm]  
P600 Style  
Type  
Weight approx.  
Gewicht ca.  
1.3 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
Ø 1.2±0.05  
Standard packaging taped in ammo pack  
Standard Lieferform gegurtet in Ammo-Pack  
Dimensions - Maße [mm]  
Maximum ratings  
Grenzwerte  
Type  
Typ  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
VRRM [V]  
Surge peak reverse voltage  
Stoßspitzensperrspannung  
V
RSM [V]  
P1200A  
P1200B  
P1200D  
P1200G  
50  
100  
200  
400  
50  
100  
200  
400  
Max. average forward rectified current, R-load  
Dauergrenzstrom in Einwegschaltung mit R-Last  
TA = 50°C  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
IFAV  
IFRM  
IFSM  
i2t  
12 A 1)  
80 A 1)  
Repetitive peak forward current  
Periodischer Spitzenstrom  
Peak forward surge current, 50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
400/450 A  
800 A2s  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
Junction temperature – Sperrschichttemperatur  
at reduced reverse voltage  
VR 80% VRRM  
VR 20% VRRM  
Tj  
Tj  
-50...+150°C  
-50...+200°C  
bei reduzierter Sperrspannung  
Storage temperature – Lagerungstemperatur  
TS  
-50...+175°C  
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case  
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1

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