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P1201-06 PDF预览

P1201-06

更新时间: 2024-02-28 02:21:32
品牌 Logo 应用领域
HAMAMATSU 光电光电器件光敏电阻
页数 文件大小 规格书
2页 117K
描述
CdS photoconductive cell

P1201-06 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
HTS代码:8541.40.80.00风险等级:5.84
Is Samacsys:N配置:SINGLE
功能数量:1最高工作温度:60 °C
最低工作温度:-30 °C光电设备类型:OPTOELECTRONIC DEVICE
Base Number Matches:1

P1201-06 数据手册

 浏览型号P1201-06的Datasheet PDF文件第2页 
V I S I B L E D E T E C T O R  
CdS photoconductive cell  
Resin coating type (5R type)  
Standard type designed for general-purpose, wide application  
CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These  
sensors are non-polar resistive elements with spectral response characteristics close to the human eye (luminous efficiency), thus making their  
operating circuits simple and small.  
Features  
Applications  
Small size, thin package  
Low price  
Wide range of sensor lineup  
Programed electronic shutter and stroboscope light control  
for compact camera  
Auto dimmer for digital display, CRT and room illumination  
Sensor for automatic light on/off  
Sensor for electronic toy and teaching aid material  
Absolute maximum ratings / Characteristics (Typ. Ta=25 °C, unless otherwise noted)  
Absolute maximum ratings  
Characteristics *1  
Cell resistance *2  
5
Response time 10  
lx *  
Peak  
Power  
dissipation  
P
Ambient  
sensitivity  
wavelength  
Supply  
voltage  
4
*
100  
10  
g
temperature  
Rise time Fall time  
tf  
10 lx, 2856 K  
0 lx *3  
Type No.  
Ta  
tr  
lp  
Min.  
(kW)  
Max.  
(kW)  
20  
Min.  
(MW)  
5.0  
100 to 10  
lx  
(Vdc)  
100  
(mW)  
30  
(°C)  
-30 to +50  
(nm)  
620  
(ms)  
60  
(ms)  
25  
P687-02  
5
0.70  
P1201-04  
P1201-06  
P1241-04  
P1241-05  
P1241-06  
P1444  
200  
100  
9
50  
-30 to +60  
-30 to +60  
-30 to +50  
540  
560  
620  
50  
20  
0.90  
40  
50  
40  
30  
40  
10  
3
8
0.2  
0.5  
0.5  
5.0  
20  
0.70  
0.70  
0.75  
50  
24  
20  
30  
5
10  
48  
50  
140  
100  
0.85  
P1445  
*1: All characteristics are measured after exposure to light (100 to 500 lx) for one to two hours.  
*2: The light source is a standard tungsten lamp operated at a color temperature of 2856 K.  
*3: Measured 10 seconds after shutting off the 10 lx light.  
*4: Typical gamma characteristics (within ±0.10 variations) between 100 lx to 10 lx  
log (R100) - log (R10  
)
γ 100  
=
10  
log (E100) - log (E10  
)
E100, E10: illuminance 100 lx, 10 lx  
R100, R10: resistance at 100 lx and 10 lx respectively  
*5: The rise time is the time required for the sensor resistance to reach 63 % of the saturated conductance level (when fully  
illuminated). The fall time is the time required for the sensor resistance to decay from the saturated conductance level to  
37 %.  
1

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