Datasheet > OSI3XNE1E1E

OSI3XNE1E1E

更新时间： 2022-04-21 21:23:53

品牌	Logo	应用领域
光谷 - OPTOSUPPLY		/
页数	文件大小	规格书
2页	134K
描述
Xeon 1 Power Infrared Emitter LED

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数据手册

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OSI3XNE1E1E 数据手册

Xeon 1 Power Infrared Emitter

LED

OSI3XNE1E1E

VER C.2

■

Features

■

Outline Dimension

●

Highest luminous flux

Super energy efficiency

Very long operating life

Superior ESD protection

●

■

Applications

Night Vision

●

Camera

A node

Cathode

Outdoor./Indoor applications

U nit:m m

Tolerance:±0.30m m

■

Absolute Maximum Rating

(Ta=25℃)

Value

■

Directivity

Item

Symbol

I_F

Unit

DC Forward Current

Pulse Forward Current*

Reverse Voltage

1000

I_FP

2000

V_R

Power Dissipation

P_D

1700

℃

Operating Temperature

Storage Temperature

Lead Soldering Temperature

Topr

Tstg

Tsol

-30 ~ +85

-40~ +100

260

℃/5sec

*Pulse width Max.10ms Duty ratio max 1/10

■

Forward Operating Current (DC)

■

Electrical -Optical Characteristics

(Ta=25℃)

Typ. Max. Unit

Item

Symbol Condition Min.

1200

1000

DC Forward Voltage

DC Reverse Current

Peak Wavelength

Radiant Power

V_F

I_R

I_F=350mA

V_R=5V

1.5

1.7

Rth(J-a)=20℃/W

800

Rth(J-a)=30℃/W

µA

600

Rth(J-a)=40℃/W

400

λ_P

P_O

I_F=350mA

850

200

110

100

Ambient Temperature, TA (ꢀ)

50% Power Angle

2θ1/2

I_F=350mA

140

deg

Note: Advises please attach heat sink to use if Power Dissipation is more than 0.5W.

LED & Application Technologies

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