HL6325G/26G
AlGaInP Laser Diodes
ODE-208-030 (Z)
Rev.0
Jul. 01, 2005
Description
The HL6325G/26G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are
suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
Features
Package Type
• HL6325G/26G: G2
Internal Circuit
• HL6325G
Internal Circuit
• HL6326G
•
•
•
•
•
•
•
Visible light output
Single longitudinal mode
: 635 nm Typ
1
3
1
3
Optical output power : 5 mW CW
Low operating current : 40 mA Typ
Low operating voltage: 2.4 V Max
Operating temperature : +60°C
TM mode oscillation
LD
PD
PD
LD
2
2
Absolute Maximum Ratings
(TC = 25°C)
Item
Optical output power
Pulse optical output power
PD reverse voltage
Symbol
Ratings
Unit
mW
mW
V
PO
5
2
PO(pulse)
VR(PD)
Topr
Tstg
30
Operating temperature
Storage temperature
–10 to +60
–40 to +85
°C
°C
Optical and Electrical Characteristics
(TC = 25°C)
Item
Threshold current
Operating current
Operating voltage
Slope efficiency
Symbol
Ith
IO
Min
—
Typ
Max
50
Unit
mA
mA
V
Test Condition
30
40
2.2
0.5
8
—
—
60
PO = 5 mW
PO = 5 mW
P
VOP
ηs
—
2.4
0.8
11
0.3
6
mW/mA 3 (mW) / (I(4mW) – I(1mW))
Beam divergence
parallel to the junction
θ//
°
PO = 5 mW
PO = 5 mW
PO = 5 mW
Beam divergence
perpendicular to the junction
θ⊥
25
31
37
°
Lasing wavelength
Monitor current
λp
630
635
640
nm
mA
IS
0.05
0.10
0.25
PO = 5 mW, VR(PD) = 5 V
Rev.0 Jul. 01, 2005 page 1 of 4