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HL6334MG PDF预览

HL6334MG

更新时间: 2024-11-04 03:42:07
品牌 Logo 应用领域
OPNEXT 半导体光电二极管激光二极管
页数 文件大小 规格书
4页 95K
描述
Low Operating Current Visible Laser Diode

HL6334MG 技术参数

生命周期:Obsolete包装说明:LD/MG, 3 PIN
Reach Compliance Code:unknown风险等级:5
Is Samacsys:N配置:SINGLE WITH BUILT-IN PHOTO DIODE
最大正向电流:0.075 A最大正向电压:2.4 V
安装特点:THROUGH HOLE MOUNT功能数量:1
最高工作温度:50 °C最低工作温度:-10 °C
光电设备类型:LASER DIODE标称输出功率:10 mW
峰值波长:635 nm半导体材料:AlGaInP
形状:ROUND尺寸:1.6 mm
子类别:Laser Diodes表面贴装:NO
最大阈值电流:60 mABase Number Matches:1

HL6334MG 数据手册

 浏览型号HL6334MG的Datasheet PDF文件第2页浏览型号HL6334MG的Datasheet PDF文件第3页浏览型号HL6334MG的Datasheet PDF文件第4页 
HL6333MG/34MG  
Low Operating Current Visible Laser Diode  
ODE-208-033A (Z)  
Rev.1  
Oct. 21, 2005  
Description  
The HL6333MG/34MG are 0.63 µm band AlGaInP 10mW laser diodes with a multi-quantum well (MQW) structure.  
They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.  
Features  
Package Type  
HL6333MG/34MG: MG  
Internal Circuit  
HL6333MG  
Internal Circuit  
HL6334MG  
Visible light output: λp = 635 nm Typ  
Single longitudinal mode  
1
3
1
3
LD  
PD  
PD  
LD  
Optical output power: 10 mW CW  
Low operating current : 55 mA Typ  
Low Operating voltage: 2.4 V Max  
Operating temperature : +50°C  
TM mode oscillation  
2
2
Absolute Maximum Ratings  
(TC = 25°C)  
Item  
Optical output power  
LD reverse voltage  
Symbol  
Ratings  
Unit  
mW  
V
PO  
10  
2
VR(LD)  
PD reverse voltage  
Operating temperature  
Storage temperature  
VR(PD)  
Topr  
Tstg  
30  
V
–10 to +50  
–40 to +85  
°C  
°C  
Optical and Electrical Characteristics  
(TC = 25°C)  
Item  
Threshold current  
Operating current  
Operating voltage  
Slope efficiency  
Symbol  
Ith  
IO  
Min  
Typ  
40  
Max  
Unit  
mA  
mA  
V
Test Conditions  
60  
75  
55  
PO = 10 mW  
PO = 10 mW  
p
VOP  
ηs  
2.2  
0.65  
8
2.4  
0.90  
11  
0.40  
6
mW/mA 6 (mW) / (I(8mW) – I(2mW))  
Beam divergence  
parallel to the junction  
θ//  
°
PO = 10 mW  
PO = 10 mW  
PO = 10 mW  
Beam divergence  
perpendicular to the junction  
θ⊥  
25  
31  
36  
°
Lasing wavelength  
Monitor current  
λp  
630  
635  
640  
nm  
mA  
IS  
0.04  
0.08  
0.16  
PO = 10 mW, VR(PD) = 5 V  
Rev.1 Oct. 21, 2005 page 1 of 4  

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