Datasheet > HL6336G

HL6336G

更新时间： 2024-11-04 03:42:07

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Circular Beam Low Operating Current

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HL6336G 数据手册

HL6335G/36G

Circular Beam Low Operating Current

ODE-208-034 (Z)

Rev.0

Jul. 01, 2005

Description

The HL6335/36G are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products

were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source for laser

levelers, laser scanners and optical equipment for measurement.

Features

Package Type

• HL6335/36G: G2

Internal Circuit

• HL6335G

Internal Circuit

• HL6336G

•

Optical output power : 5 mW CW

Single longitudinal mode

Visible light power

Low operating current : 25 mA Typ

Low aspect ratio : 1.2 Typ

: 635 nm Typ

Operating temperature : +50°C

TM mode oscillation

Absolute Maximum Ratings

(T_C= 25°C)

Item

Optical output power

Pulse optical output power

LD reverse voltage

Symbol

Ratings

Unit

P_O

6 *

P_O(pulse)

V_R(LD)

V_R(PD)

Topr

PD reverse voltage

Operating temperature

Storage temperature

–10 to +50

–40 to +85

°C

Tstg

°C

Note: Pulse condition : Pulse width ≤ 1 µs , duty ≤ 50%

Optical and Electrical Characteristics

(T_C= 25°C)

Item

Threshold current

Slope efficiency

Operating current

Operating voltage

Symbol

Ith

Min

—

Typ

Max

Unit

Test Conditions

—

ηs

0.5

—

0.8

1.1

mW/mA 3 (mW) / (I_(4mW)– I_(1mW))

I_OP

V_OP

λp

P_O= 5 mW

—

2.4

635

2.7

640

Lasing wavelength

630

Beam divergence

θ//

parallel to the junction

Beam divergence

perpendicular to the junction

θ⊥

P_O= 5 mW

Aspect ratio

θ⊥/θ//

—

1.2

1.5

—

Monitor current

I_S

0.03

0.07

0.12

P_O= 5 mW, V_R(PD)= 5 V

Notes: 1. Care must be taken in laser diodes handling to prevent optical damage caused by forward surges as well as

by ESD.

2. The beam has 12 deg offset against the package reference plane. Please take account it mounted on a

board.

Rev.0 Jul. 01, 2005 page 1 of 5

12 3 4 5

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