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OPA381AIDRBT PDF预览

OPA381AIDRBT

更新时间: 2024-01-31 11:13:07
品牌 Logo 应用领域
德州仪器 - TI 放大器光电二极管
页数 文件大小 规格书
25页 837K
描述
精确低功耗高速互阻抗放大器 | DRB | 8 | -40 to 125

OPA381AIDRBT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SON
包装说明:HVSON, SOLCC8,.12,25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01Factory Lead Time:1 week
风险等级:0.88放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.00005 µA
25C 时的最大偏置电流 (IIB):0.00005 µA最小共模抑制比:95 dB
标称共模抑制比:110 dB频率补偿:YES
最大输入失调电流 (IIO):0.0001 µA最大输入失调电压:25 µV
JESD-30 代码:S-PDSO-N8长度:3 mm
低-偏置:YES低-失调:YES
微功率:NO功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:HVSON封装等效代码:SOLCC8,.12,25
封装形状:SQUARE封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
包装方法:TR功率:NO
可编程功率:NO座面最大高度:1 mm
标称压摆率:12 V/us最大压摆率:1.1 mA
供电电压上限:7 V标称供电电压 (Vsup):5 V
表面贴装:YES温度等级:AUTOMOTIVE
端子形式:NO LEAD端子节距:0.65 mm
端子位置:DUAL标称均一增益带宽:18000 kHz
最小电压增益:5623413.252宽带:NO
宽度:3 mmBase Number Matches:1

OPA381AIDRBT 数据手册

 浏览型号OPA381AIDRBT的Datasheet PDF文件第3页浏览型号OPA381AIDRBT的Datasheet PDF文件第4页浏览型号OPA381AIDRBT的Datasheet PDF文件第5页浏览型号OPA381AIDRBT的Datasheet PDF文件第7页浏览型号OPA381AIDRBT的Datasheet PDF文件第8页浏览型号OPA381AIDRBT的Datasheet PDF文件第9页 
ꢂ ꢀꢉ ꢠꢡꢢ  
ꢂ ꢀꢉ ꢣꢠꢡ ꢢ  
www.ti.com  
SBOS313B − AUGUST 2004 − REVISED NOVEMBER 2004  
TYPICAL CHARACTERISTICS: V = +2.7V to +5.5V (continued)  
S
All specifications at T = +25°C, R = 10kconnected to V /2, and V  
OUT  
= V /2, unless otherwise noted.  
S
A
L
S
TRANSIMPEDANCE AMP CHARACTERISTIC  
CDIODE = 100pF  
150  
140  
130  
120  
110  
100  
90  
80  
70  
60  
Circuit for Transimpedance Amplifier Characteristic curves on this page.  
R
= 10MΩ  
CF  
C
= 0.5pF  
F
F
C
F
= 1pF  
= 4pF  
= 1M  
R
F
RF  
C
F
R
= 100kΩ  
= 10kΩ  
F
CSTRAY  
C
= 12pF  
R
F
F
50  
40  
30  
20  
OPA381  
C
(parasitic) = 0.2pF  
STRAY  
CDIODE  
10  
100  
1k  
10k  
100k  
Frequency (Hz)  
1M  
10M  
100M  
100M  
100M  
TRANSIMPEDANCE AMP CHARACTERISTIC  
150  
TRANSIMPEDANCE AMP CHARACTERISTIC  
150  
140  
130  
120  
110  
100  
90  
C
= 50pF  
C
= 20pF  
140  
130  
120  
110  
100  
90  
80  
70  
60  
DIODE  
DIODE  
R
= 10MΩ  
R
= 10M  
F
F
C
= 1pF  
= 1M  
R
= 1M  
R
F
F
F
C
= 0.5pF  
F
C
= 3pF  
F
R
= 100kΩ  
= 10kΩ  
R
= 100k  
C
= 2pF  
= 5pF  
F
F
F
80  
C
= 8pF  
70  
R
R
= 10k  
F
F
F
C
60  
50  
40  
F
50  
40  
30  
30  
20  
C
(parasitic) = 0.2pF  
20  
STRAY  
C
(parasitic) = 0.2pF  
STRAY  
10  
10  
100  
100  
1k  
10k  
100k  
Frequency (Hz)  
1M  
10M  
100M  
1k  
10k  
100k  
Frequency (Hz)  
1M  
10M  
TRANSIMPEDANCE AMP CHARACTERISTIC  
TRANSIMPEDANCE AMP CHARACTERISTIC  
150  
140  
130  
120  
110  
100  
90  
150  
140  
130  
120  
110  
100  
90  
C
= 1pF  
C
= 10pF  
DIODE  
DIODE  
R
= 10M  
= 10M  
R
F
F
R
= 1M  
= 1M  
R
F
F
C
= 0.5pF  
F
C
= 0.5pF  
F
R
= 100k  
R
= 100k  
C
= 2pF  
F
F
F
80  
80  
70  
70  
= 10k  
R
R
= 10k  
F
F
C
= 2pF  
60  
50  
40  
30  
60  
50  
F
C
= 4pF  
F
40  
30  
20  
C
(parasitic) = 0.2pF  
STRAY  
20  
C
(parasitic) = 0.2pF  
STRAY  
10  
10  
100  
100  
1k  
10k  
100k  
1M  
10M  
100M  
1k  
10k  
100k  
1M  
10M  
Frequency (Hz)  
Frequency (Hz)  
6

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