Datasheet > OP560C

OP560C

更新时间： 2023-12-06 19:52:58

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OP560C 数据手册

NPN Silicon Phototransistor

OP550, OP552, OP555, OP560, OP750 Series

OP550 (A, B, C), OP552D, OP560 (A, C), OP750 (A, B)

[MILLIMETERS]

INCHES

DIMENSIONS ARE IN:

OP555 (A, B)

[MILLIMETERS]

INCHES

DIMENSIONS ARE IN:

OP555 - CONTAINS POLYSULFONE

Pin #

Sensor

Emiꢀer

To avoid stress cracking, we suggest using

ND Industries’ Vibra-Tite for thread-locking.

Vibra-Tite evaporates fast without causing structural failure in

OPTEK'S molded plasꢁcs.

Collector

Notes:

1. RMA ﬂux is recommended. Duraꢁon can be extended to 10 seconds maximum when ﬂow soldering. A maximum 20 grams force may be applied

to the leads when soldering.

2. For OP550, OP560 and OP555, derate linearly 1.33 mW/° C above 25° C. For OP552, derate linearly 1.25 mW/° C above 25° C.

3. For all phototransistors in this series, the light source is an unﬁltered GaAs LED with a peak emission wavelength of 935 nm. For OP550 and

OP555 only, a radiometric intensity level that varies less than 10% over the enꢁre lens surface of the phototransistor being tested applies.

4. To calculate typical collector dark current in µA, use the formula I_CEO=10 ^{(0.040 T - 3.4)}, where T_Ais ambient temperature in ° C.

General Note

TT Electronics | OPTEK Technology

2900 E. Plano Pkwy, Plano, TX 75074 | Ph: +1 972 323 2200

www.ꢀelectronics.com | sensors@ꢀelectronics.com

TT Electronics reserves the right to make changes in product speciﬁcaꢁon without

noꢁce or liability. All informaꢁon is subject to TT Electronics’ own data and is

considered accurate at ꢁme of going to print.

Rev C 05/2022 Page 2

123 4 5 6

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