Datasheet > OP516D

OP516D

更新时间： 2024-01-06 02:28:51

品牌	Logo	应用领域
TTELEC		光电
页数	文件大小	规格书
2页	546K
描述
NPN Silicon Phototransistors

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OP516D 技术参数

NPN Silicon Phototransistors

OP516A, OP516B, OP516C, OP516D

Features:

xꢀ Variety of sensitivity ranges

xꢀ Coaxial leaded package style

xꢀ Small package size for space limited applications

Description:

The OP516 series devices consist of NPN silicon phototransistors in a small hermetic package with an

extended Collector lead. The narrow receiving angle provides excellent on-axis coupling. This device is

100% production tested using infrared light for close correlation with Optek’s GaAs and GaAIAs emitters.

Absolute Maximum Ratings (T_A=25°C unless otherwise noted)

Continuous Collector Current

50 mA

Collector-Emitter Voltage

30 V

5.0 V

Emitter-Collector Voltage (OP505 and OP506 series only)

Storage & Operating Temperature Range

Lead Soldering Temperature (1/16 inch (1.6 mm) from case for 5 sec. with soldering iron)

Power Dissipation

-55°C to +125°C

260°C⁽¹⁾

100 mW⁽²⁾

Notes:

(1) RMA flux is recommended. Duration can be extended to 10 seconds max. when flow soldering. Maximum 20 grams force may

be applied to the leads when soldering.

(2) Derate linearly 0.71 mW/° C above 25° C.

Dimensions are in inches (mm)

OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006

Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com

Issue A.1 11/08

Page 1 of 2

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