2N3055, MJ2955
Preferred Device
Complementary Silicon
Power Transistors
. . . designed for general−purpose switching and amplifier
applications.
• DC Current Gain − h = 20−70 @ I = 4 Adc
FE
C
http://onsemi.com
• Collector−Emitter Saturation Voltage −
= 1.1 Vdc (Max) @ I = 4 Adc
V
CE(sat)
C
15 A
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 V
• Excellent Safe Operating Area
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Base Current
Symbol
Value
60
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
115 W
V
CEO
CER
V
70
MARKING
DIAGRAM
V
CB
100
7
V
EB
I
C
15
xxxx55
TO−204AA (TO−3)
CASE 1−07
A
I
B
7
YYWW
Total Power Dissipation @ T = 25°C
Derate above 25°C
P
D
115
0.657
W
W/°C
C
Operating and Storage Junction Tempera-
ture Range
T , T
–65 to +200
°C
xxxx55 = Device Code
J
stg
xxxx= 2N3055 or MJ2955
= Assembly Location
= Year
A
YY
THERMAL CHARACTERISTICS
Characteristic
WW = Work Week
Symbol
Max
Unit
x
= 1, 2, or 3
Thermal Resistance, Junction−to−Case
R
1.52
°C/W
q
JC
ORDERING INFORMATION
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
†
Device
2N3055
Package
Shipping
TO−204AA
100 Units / Tray
1 Units / Tubes
2N3055G
TO−204AA
(Pb−Free)
160
140
120
2N3055H
MJ2955
TO−204AA
TO−204AA
100 Units / Tray
100 Units / Tray
100
80
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
60
40
20
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
0
0
25
50
75
100
125
150
175
200
Preferred devices are recommended choices for future use
and best overall value.
T , CASE TEMPERATURE (°C)
C
Figure 1. Power Derating
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
April, 2004 − Rev. 4
2N3055/D