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OM6408SDV

更新时间： 2024-01-10 05:25:57
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
4页 48K
描述
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.6ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, METAL PACKAGE-16

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OM6408SDV 技术参数

生命周期：TransferredReach Compliance Code：unknown
风险等级：5.71其他特性：HIGH RELIABILITY
外壳连接：ISOLATED配置：SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：500 V最大漏极电流 (ID)：4.5 A
最大漏源导通电阻：1.6 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-MDFM-F16元件数量：4
端子数量：16工作模式：ENHANCEMENT MODE
封装主体材料：METAL封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：18 A认证状态：Not Qualified
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

OM6408SDV 数据手册

 浏览型号OM6408SDV的Datasheet PDF文件第1页浏览型号OM6408SDV的Datasheet PDF文件第2页浏览型号OM6408SDV的Datasheet PDF文件第4页 
ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS: (TC = 25°C unless otherwise noted)  
STATIC P/N OM6407SD  
Parameter  
(400V)  
STATIC P/N OM6408SD (500V)  
Parameter  
Min. Typ. Max. Units Test Conditions  
Min. Typ. Max. Units Test Conditions  
BVDSS Drain-Source Breakdown  
Voltage  
VGS = 0,  
BVDSS Drain-Source Breakdown  
VGS = 0,  
400  
2.0  
V
V
500  
V
V
ID = 250 mA  
Voltage  
ID = 250 mA  
VGS(th) Gate-Threshold Voltage  
4.0  
VDS = VGS, ID = 250 mA  
VGS(th) Gate-Threshold Voltage  
2.0  
4.0  
VDS = VGS, ID = 250 mA  
IGSS  
IGSS  
IDSS  
Gate-Body Leakage (OM6103)  
Gate-Body Leakage (OM6003)  
Zero Gate Voltage Drain  
Current  
± 500 nA VGS = ± 12.8 V  
± 100 nA VGS = ± 20 V  
IGSS  
IGSS  
IDSS  
Gate-Body Leakage (OM6104)  
Gate-Body Leakage (OM6004)  
Zero Gate Voltage Drain  
Current  
± 500 nA VGS = ± 12.8 V  
± 100 nA VGS = ± 20 V  
0.1 0.25 mA VDS = Max. Rat., VGS = 0  
0.1 0.25 mA VDS = Max. Rat., VGS = 0  
V
DS = 0.8 Max. Rat., VGS = 0,  
VDS = 0.8 Max. Rat., VGS = 0,  
0.2 1.0 mA  
0.2 1.0 mA  
A
TC = 125° C  
TC = 125° C  
ID(on)  
On-State Drain Current1  
5.5  
VDS 2 VDS(on), VGS = 10 V  
ID(on)  
On-State Drain Current1  
4.5  
A
V
VDS 2 VDS(on), VGS = 10 V  
VGS = 10 V, ID = 2.5 A  
VDS(on) Static Drain-Source On-State  
Voltage1  
VDS(on) Static Drain-Source On-State  
Voltage1  
2.4 3.15  
1.05  
V
VGS = 10 V, ID = 3.0 A  
VGS = 10 V, ID = 3.0 A  
3.25 4.00  
1.6  
RDS(on) Static Drain-Source On-State  
Resistance1  
RDS(on) Static Drain-Source On-State  
Resistance1  
VGS = 10 V, ID = 2.5 A  
RDS(on) Static Drain-Source On-State  
Resistance1  
VGS = 10 V, ID = 3.0 A,  
TC = 125 C  
RDS(on) Static Drain-Source On-State  
Resistance1  
VGS = 10 V, ID = 2.5 A,  
TC = 125 C  
2.0  
2.9 3.3  
DYNAMIC  
DYNAMIC  
) W (  
) W (  
gfs  
Forward Transductance1  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Rise Time  
3.0 3.6  
S(W ) VDS 2 VDS(on), ID = 3.0 A  
pF VGS = 0  
gfs  
Forward Transductance1  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On Delay Time  
Rise Time  
2.5 2.8  
700  
90  
S(W ) VDS 2 VDS(on), ID = 2.5 A  
pF VGS = 0  
Ciss  
Coss  
Crss  
td(on)  
tr  
700  
70  
20  
18  
20  
40  
25  
Ciss  
Coss  
Crss  
td(on)  
tr  
pF VDS = 25 V  
pF f = 1 MHz  
ns VDD = 175 V, ID @ 3.0 A  
ns Rg = 10 W ,VGS = 10 V  
ns  
pF VDS = 25 V  
pF f = 1 MHz  
ns VDD = 225 V, ID @ 2.5 A  
ns Rg = 7.5 W , VGS = 10 V  
ns  
30  
18  
20  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
42  
ns  
25  
ns  
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS  
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS  
IS  
Continuous Source Current  
Modified MOSPOWER  
IS  
Continuous Source Current  
Modified MOSPOWER  
D
D
- 5.5  
A
- 4.5  
A
(Body Diode)  
Source Current1  
symbol showing  
G
(Body Diode)  
Source Current1  
symbol showing  
G
ISM  
the integral P-N  
ISM  
the integral P-N  
- 22  
A
- 18  
A
S
S
(Body Diode)  
Junction rectifier.  
(Body Diode)  
Junction rectifier.  
VSD  
VSD  
trr  
Diode Forward Voltage1  
Diode Forward Voltage1  
Reverse Recovery Time  
TC = 25 C, IS = -5.5 A, VGS = 0  
TC = 25 C, IS = -4.5 A, VGS = 0  
TJ = 150 C, IF = IS,  
VSD  
VSD  
trr  
Diode Forward Voltage1  
Diode Forward Voltage1  
Reverse Recovery Time  
TC = 25 C, IS = -4.5 A, VGS = 0  
TC = 25 C, IS = -4 A, VGS = 0  
TJ = 150 C, IF = IS,  
- 1.6  
- 2.5  
V
V
- 1.4  
- 2  
V
V
470  
ns  
430  
ns  
dlF/ds = 100 A/ms  
dlF/ds = 100 A/ms  
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.  
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.  
1234

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